Abstract:We present a first principles investigation of structural, electronic, optical, thermoelectric, and photovoltaic properties of the chalcopyrite AgGaTe 2 and AgGaSe 2 compounds, using the full potential linearized augmented plane wave method, as part of the density functional theory. The calculated lattice parameters are in good agreement with the experimental and theoretical values. The band gaps energies of the studied systems were determined using different exchange-correlation functionals such as GGA-PBEsol, EV-GGA, YS-PBE0, and TB-mBJ methods. It is found that both compounds are semiconductors with a direct band gap (Γ-Γ). This direct band gap means that AgGaTe 2 and AgGaSe 2 materials can be used in the optical and optoelectronic devices. In accordance with this, the photovoltaic efficiency of the semiconducting was investigated using Solar Cell Capacitance Simulator-1D software. The best efficiencies of 23.76% and 17.52% were obtained at a thickness of 2.2 μm for AgGaTe 2 and AgGaSe 2 compounds, respectively. The lattice thermal conductivities for both compounds are remarkably low, with values at 300 K of 0.033 and 0.013 W×m − 1 ×K − 1 for AgGaTe 2 and AgGaSe 2 , respectively. In addition, we studied the thermoelectric properties at room temperature, using semi-classical Boltzmann transport theory. The positive values of the Seebeck coefficient for both compounds exceed their absolute negative values, indicating that AgGaTe 2 and AgGaSe 2 are p-type materials. The obtained values of figure of merit for AgGaTe 2 and AgGaSe 2 are 0.70 and 0.81, respectively. The calculated results reveal that both chalcopyrites are potential thermoelectric materials. The band-gap edge potentials for AgGaTe 2 and AgGaSe 2 are − 0.65 eV and − 0.635 eV, respectively, which are below the required potential of -0.61 eV for CO 2 reduction to formic acid. This result means that AgGaTe 2 and AgGaSe 2 are suitable compounds for photocatalytic CO 2 reduction.

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