Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Kun Peng,Nicholas Paul Morgan,Ford M. Wagner,Thomas Siday,Chelsea Qiushi Xia,Didem Dede,Victor Boureau,Valerio Piazza,Anna Fontcuberta i Morral,Michael B. Johnston

DOI: https://doi.org/10.1038/s41467-023-44345-1

IF: 16.6

2024-01-02

Nature Communications

Abstract:Abstract Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.

multidisciplinary sciences

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a new type of terahertz (THz) receiver, which can directly and integrally sample terahertz pulses and has the ability to work at room temperature. Specifically, the paper presents a photoconductive THz receiver based on horizontally - grown indium arsenide nanowires (InAs NWs) embedded in a bow - tie antenna. The characteristics of these receivers are as follows:

1. **Materials and Structures**: Horizontally - grown InAs nanowires are used. These nanowires have a short photoconductive lifetime while maintaining high electron mobility. In addition, the large surface - to - volume ratio ensures a low dark current, thereby reducing thermal noise, which is more advantageous than narrow - bandgap bulk materials.

2. **Functional Characteristics**: By adjusting the morphology of the nanowires, the nanowires exhibit significantly different photoconductive lifetimes, enabling the receiver to detect THz photons in both direct - sampling and integral - sampling modes. These broadband nanowire receivers are compatible with gated lasers in the entire telecommunication wavelength range (1.2 - 1.6 μm), and are therefore very suitable for low - cost all - optical fiber - based THz time - domain spectroscopy and imaging systems.

3. **Manufacturing and Scalability**: These devices are positioned by lithography technology and can therefore be scaled to wafer - scale, paving the way for a new generation of commercial THz receivers.

4. **Application Prospects**: These receivers have potential in high - speed and real - time THz time - domain spectral imaging, especially in all - fiber THz spectroscopy and imaging systems based on telecommunication lasers, and may become a breakthrough technology.

In conclusion, the paper aims to improve the application performance and scalability of THz technology in fields such as wireless communication, sensing, spectroscopy, and imaging by designing and manufacturing a new type of THz receiver based on InAs nanowires.