Abstract:A robust electric‐field control of exchange bias (EB) effect and magnetism transition is realized in a pure CrI3 homotrilayer. The doping from the Y‐doped HfO2 substrate alters the interlayer coupling of intrinsic CrI3 trilayer and further causes the EB effect. The gate voltage reverses the magnetization direction layer‐by‐layer in homotrilayer CrI3, leading to a colossal EB modulation of 0.48 T. Controlling exchange bias (EB) by electric fields is crucial for next‐generation magnetic random access memories and spintronics with ultralow energy consumption and ultrahigh speed. Multiferroic heterostructures have been traditionally used to electrically control EB and interfacial ferromagnetism through weak/indirect coupling between ferromagnetic and ferroelectric films. However, three major bottlenecks (lattice mismatch, interface defects, and weak/indirect coupling in multiferroic heterostructures) remain, resulting in only a few tens of milli‐tesla EB field. Here, this study reports a robust electric‐field control recipe to dynamically tailor the EB effect in a pure CrI3 homotrilayer on a ferroelectric Y‐doped HfO2 (HYO) substrate, and demonstrate a colossal and tunable EB field (HE) from −0.15 to +0.33 T, giving rise to an EB modulation of 0.48 T. The charge doping due to ferroelectric HYO film divides a homo‐configuration of CrI3 homotrilayer into one antiferromagnetic (AFM) bilayer CrI3 and one ferromagnetic (FM) monolayer CrI3, favoring direct exchange coupling. The synergies of charge doping and electric field induce a transition of magnetic orders from AFM to FM phase in bilayer CrI3, which is also supported by first‐principles calculations, leading to the robust electric control of colossal EB effect. The results therefore open numerous opportunities for exploring 2D spintronics, memories, and braininspired in‐memory computing.

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