Broadband Visible−Near Infrared Two‐Dimensional WSe 2 /In 2 Se 3 Photodetector for Underwater Optical Communications

Jihua Zou,Yizhen Ke,Xiangyu Zhou,Yixuan Huang,Wen Du,Lin Lin,Shunyong Wei,Lingzhi Luo,Hezhuang Liu,Chuanlin Li,Kai Shen,Aobo Ren,Jiang Wu

DOI: https://doi.org/10.1002/adom.202200143

IF: 9

2022-04-11

Advanced Optical Materials

Abstract:WSe2/α‐In2Se3 heterojunction structure is constructed to enhance the optical absorption and realize a p–n junction photodetector. The photodetector can work efficiently over a broadband spectrum (from 405 to 905 nm) and a rise/fall time of 110/120 µs is achieved. Consequently, the underwater wireless optical communication system is established under λ = 520 nm illumination, which is promising for practical applications.P–n junctions based on 2D materials can be achieved using a selective doping technique, while such a method is challenged by the complex fabrication process. Here, a facile van der Waals (vdWs) structured p–n heterojunction is demonstrated by simply transferring an n‐type multilayer α‐In2Se3 (direct bandgap) on a p‐type ultra‐thin WSe2 nanosheet. The vdWs stacked photodetector with an improved type‐II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode‐like behavior. This behavior is further confirmed by the high‐resolution scanning photocurrent mapping. As a result, the as‐fabricated device exhibits a short response time (<120 µs) and a high responsivity of 1.84 A W−1 under 520 nm laser illumination. Accordingly, an underwater optical communication system based on the WSe2/α‐In2Se3 p‐n heterojunction photodetector is demonstrated, which is promising for next‐generation high‐performance and low‐power detection applications.

materials science, multidisciplinary,optics