A CMOS-integrated terahertz near-field sensor based on an ultra-strongly coupled meta-atom

Alexander V. Chernyadiev,Dmytro B. But,Yurii Ivonyak,Kęstutis Ikamas,Alvydas Lisauskas

DOI: https://doi.org/10.1038/s41598-024-61971-x

IF: 4.6

2024-05-21

Scientific Reports

Abstract:Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.

multidisciplinary sciences