Abstract:Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10-8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at -1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors.

Research on the Fabrication and X‐Ray Detection Performance of MAPbBr3‐Based 3D/2D Heterojunctions

Liquid-Phase Epitaxial Growth of Large-Area MAPbBr 3– n Cl n /CsPbBr 3 Perovskite Single-Crystal Heterojunction for Enhancing Sensitivity and Stability of X-ray Detector

Suppression of Ionic and Electronic Conductivity by Multilayer Heterojunctions Passivation Toward Sensitive and Stable Perovskite X‐Ray Detectors

Highly Stable and Sensitive (PEA)2PbBr4/CsPbBr3 Single‐Crystal Heterojunction X‐Ray Detector with Ultra‐Low Detection Limit

High-performance single crystal CH 3 NH 3 PbI 3 perovskite x-ray detector

High-performance Single Crystal CH3NH3PbI3 Perovskite X-Ray Detector

Perovskite single crystals with tin–lead gradient for improved ionization radiation detection

Ultralow detection limit and high sensitivity X-ray detector of high-quality MAPbBr 3 perovskite single crystals

Solution-processed MAPbI 3 /Cs 2 AgBiBr 6 heterostructure through epitaxial growth for broadband photo-detection

Crystalline–Amorphous Heterojunction for a Metal Halides Single Crystals X‐Ray Detector with Substantially Increased Sensitivity

Ion migration and dark current suppression in quasi-2D perovskite-based X-ray detectors

Solution‐Grown Large‐Sized Single‐Crystalline 2D/3D Perovskite Heterostructure for Self‐Powered Photodetection

Self‐Powered and Flexible Photodetector with High Polarization Sensitivity Based on MAPbBr3–MAPbI3 Microwire Lateral Heterojunction

X-ray Scintillation in Lead Halide Perovskite Crystals

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors

Co-axial silicon/perovskite heterojunction arrays for high-performance direct-conversion pixelated X-ray detectors

Sequential Growth of 2D/3D Double‐Layer Perovskite Films with Superior X‐Ray Detection Performance

Ultrasensitive and Robust 120 keV Hard X‐Ray Imaging Detector based on Mixed‐Halide Perovskite CsPbBr 3− n I n Single Crystals

Heterointerface Design of Perovskite Single Crystals for High‐Performance X‐ray Imaging

Wafer-Sized CsPbBr3/CsPbCl3 Heterojunction: Breaking the Trade-Off between Sensitivity and Dark Current for Efficient X-ray Detector

Ultrasensitive and stable X-ray detection using zero-dimensional lead-free perovskites