Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

Kirill I. Bolotin,Ferdinand Kuemmeth,D. C. Ralph
DOI: https://doi.org/10.1103/physrevlett.97.127202
IF: 8.6
2006-09-20
Physical Review Letters
Abstract:We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.
physics, multidisciplinary
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