Abstract:This work reports efficient full‐spectrum white light‐emitting diodes (WLEDs) excited by monolithically integrated III‐nitride structure, where trichromatic multiple quantum wells are constructed by bandgap engineering technique, allowing flexible manipulation of carrier transport. With commercial green‐red phosphor mixture, the fabricated WLEDs achieve broadband spectra with low‐ratio blue component, superior color rendering, and high luminous efficacy at different correlated color temperatures. Great progress made by heteroepitaxial growth technology encourages rapid development of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly, innate bandgap tunability of III‐nitride materials renders them attractive for white light‐emitting diodes (WLEDs) that are considered as next‐generation solid‐state lighting sources. However, commercial phosphor‐converted WLEDs suffer from poor color rendering index (CRI) and intense blue component, hard to fulfill demanding requirements simultaneously for energy efficiency and healthy lighting. Here, an efficient full‐spectrum WLED excited by monolithically integrated III‐nitride quantum structure is reported, in which trichromatic InGaN/GaN multiple quantum wells are constructed by bandgap engineering heteroepitaxy growth allowing flexible regulation of indium composition and quantum barrier thickness to manipulate carrier transport behavior. Furthermore, relationship between structural parameters and emission characteristics as well as their impact on white light performance is systematically demonstrated. Combined with commonly used green‐red phosphor mixture, the fabricated full‐spectrum warm/cold WLEDs can emit broadband and continuous spectra with low‐ratio blue component, first exhibiting superior CRI (> 97/98), color fidelity (97/97), saturation (100/99), and luminous efficacy (>120/140 lm W−1). This work demonstrates the advantages of bandgap‐engineered quantum structure applied in excitation source, and opens up new avenues for the exploration of high‐quality solid‐state lighting.

Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs

Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Highly efficient optical transition between excited states in wide InGaN quantum wells

23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

Demonstration of Weak Polarization Electric Field III-N LEDs Based on Polar Plane

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

Cubic GaN and InGaN/GaN quantum wells

Manipulation of Polarization Characteristics in Wurtzite ΙΙΙ-nitride Nanowires for Linearly Polarized Emission

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

Unusual hot carrier effect and improved carrier extraction observed in asymmetric dilute-nitride quantum-engineered solar cells through photoluminescence (PL) and external quantum efficiency (EQE) measurements

Wafer-scale Vertical Injection III-nitride Deep-Ultraviolet Light Emitters

Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes