Development of optoelectronic properties of a novel graphene oxide/copper phthalocyanine composite: Production and photoelectric characteristics of diode

Armağan Günsel,Hilal Günsel,Hasan Pişkin,Ahmet T. Bilgiçli,Bayram Gündüz,M. Nilüfer Yarasir
DOI: https://doi.org/10.1016/j.optmat.2024.116530
IF: 3.754
2024-12-06
Optical Materials
Abstract:Novel copper (II) phthalocyanine bearing 3-chloro-4-fluorophenoxy (2) and its graphene oxide (GO)-based composites (2a-2f) were synthesized and characterized. The single crystal of the starting material compound (1) was analyzed for the first time using X-ray diffraction in this study. Phthalocyanine composites containing different percentages of graphene oxide by weight ( wt.% GO) were prepared. SEM (scanning electron microscopy) results confirmed the interaction between GO and CuPc (2) . In this study, the effects of concentration on the optoelectronic and conductivity properties of CuPc (2) , as well as the influence of graphene oxide on the optoelectronic properties of CuPc (2) were extensively investigated. Additionally, the surface morphological properties of the phthalocyanine film were analyzed. Finally, an n-Si/CuPc (2) /Al diode was fabricated, and its photoelectric properties were investigated.
materials science, multidisciplinary,optics
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