Silicon, Carbon, Germanium, Aluminum Nitride nanocages (Si60, C60, Ge60, Al30N30) as catalysts of N2 reduction to NH3

Durgesh Singh,Hijaz Ahmad,Youssef Ali Naeem,Shaima Haithem Zaki,Khalid Mujasam Batoo,Saad khudhur Mohammed,Ahmed Ahmed Ibrahim,Bouchaib Zazoum,Khaldoon T. Falih,Ayadh Al-khalid,Batool Ali Ahmed,Ahmed Elawadi,Lijuan Ma

DOI: https://doi.org/10.1007/s12633-024-02876-2

IF: 3.4

2024-02-14

Silicon

Abstract:The potential of Zn, Co and Mn doped Silicon, Carbon, Germanium, Aluminum Nitride (Si 60 , C 60 , Ge 60 , Al 30 N 30 ) nanocages for N 2 -RR to produce the NH 3 are examined by theoretical methods. The possible reaction steps of N 2 -RR on Zn, Co and Mn doped Silicon, Carbon, Germanium, Aluminum Nitride (Si 60 , C 60 , Ge 60 , Al 30 N 30 ) nanocages are examined by theoretical methods. Results shown that the ∆E adsorption of Silicon, Carbon, Germanium, Aluminum Nitride (Si 60 , C 60 , Ge 60 , Al 30 N 30 ) nanocages are valuable. The Zn, Co and Mn doped Silicon, Germanium, Aluminum Nitride (Si 60 , Ge 60 , Al 30 N 30 ) nanocages are done the N 2 -RR with lower potential than Zn, Co and Mn doped Carbon nanocages. The abilities of Zn, Co and Mn doped nanocages in this study for N 2 -RR are higher than C nanotube, BN nanotube and graphene derivatives in previous works. Finally, the Zn, Co and Mn doped Silicon, Carbon, Germanium, Aluminum Nitride (Si 60 , C 60 , Ge 60 , Al 30 N 30 ) nanocages have high efficiency for N 2 -RR.

materials science, multidisciplinary,chemistry, physical