In-situ synthesis method of three-dimensional silicon/reduced graphene oxide semiconductor nanohybrids for efficient electromagnetic absorption

Xiaonan Li,Tianpeng Li,Yue Kang,Zengyong Chu,Kaichuang Zhang,Aiqiang Guo,Jinliang Zhuang,Xinbao Gao

DOI: https://doi.org/10.1016/j.compscitech.2022.109396

IF: 9.1

2022-05-01

Composites Science and Technology

Abstract:3D Si/rGO semiconductor nanohybrids were built from the in-situ synthesis of silicon dioxide (SiO2) and graphene oxide (GO) through magnesium thermal reduction. The incorporation of Si/rGO into a three-dimensional structure was connected by hydrogen-bonding from Si/rGO and PVA. SEM and TEM images indicated the three-dimensional structure of the samples. FT-IR, XPS, DSC, BET and UV–Vis spectra revealed the presence of Si semiconductor that was doped into the surface and edge of rGO frameworks. The electromagnetic absorbing property and the complex permittivity could be controlled by adjusting the content of Si. The maximum RL of the wax composite filled with 20 wt% 3D Si/rGO was −55.48 dB at 8.61 GHz and 2.75 mm, and the effective bandwidth reached 4.69 GHz at 1.5 mm. The three-dimensional structure of the semiconductor nanohybrids provided multiple transmission channels and reflection interfaces which could consume significant amount of microwave energy. Decorating of Si in this structure supplies high dielectric loss tangent and excellent impedance matching property, and provides highly efficient dielectric lightweight material without adding magnetic substance. This work demonstrates that in-situ synthesis method is a facile and efficient strategy to obtaining optimal electromagnetic absorbing property and mechanical property of 3D Si/rGO semiconductor nanohybrids.

materials science, composites