Hard superconducting gap in PbTe nanowires

Yichun Gao,Wenyu Song,Shuai Yang,Zehao Yu,Ruidong Li,Wentao Miao,Yuhao Wang,Fangting Chen,Zuhan Geng,Lining Yang,Zezhou Xia,Xiao Feng,Yunyi Zang,Lin Li,Runan Shang,Qi-Kun Xue,Ke He,Hao Zhang
DOI: https://doi.org/10.1088/0256-307x/41/3/038502
2024-02-27
Chinese Physics Letters
Abstract:Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induced superconducting gap. A hard gap, evident as vanishing subgap conductance in tunneling spectroscopy, is both necessary and desired. Previously, a hard gap has been achieved and extensively studied in III-V semiconductor nanowires (InAs and InSb). In this study, we present the observation of a hard superconducting gap in PbTe nanowires coupled to a superconductor Pb. The gap size ( ) is 1 meV (maximally 1.3 meV in one device). Additionally, subgap Andreev bound states can also be created and controlled through gate tuning. Tuning a device into the open regime can reveal Andreev enhancement of the subgap conductance. These results pave the way for diverse superconducting quantum devices based on PbTe nanowires.
physics, multidisciplinary
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