Abstract:The solid electrolyte is expected to be an alternative to the liquid electrolyte in Li-ion batteries. The former is believed to be safer, capable of delivering higher energy density, faster recharging, higher voltage capability, and longer cycle life. Li4SiO4 is one of the members of the oxide-based LISICON family that can be utilized as a solid-state electrolyte for Li-ion batteries due to its unique intrinsic properties, flexible synthesis techniques, and stability with different electrodes. However, it possesses low ionic conductivity, which is detrimental to its industrial application. Using the density functional theory (DFT) and ab initio molecular dynamics (AIMD), we have investigated the thermodynamic stability and effect of different point defects (viz., substitution of P, Al, or Ge at the Si site and Li-vacancies (□)) on the ion transport properties of LISICON (Li4SiO4). As a first step, using DFT, we have computed the formation energies of different defects in LISICON to determine the thermodynamically stable configurations. Following this, we have performed AIMD simulation on (meta)stable (un)doped systems to study the diffusion and ionic conductivity of Li-ions. Our results reveal that the defects that maintain charge neutrality are the most stable ones and the jumps between different planes are not the same, leading to the anisotropic nature in ionic conductivity. We observe that interplanar jumps of Li-ions are minimum in bc planes, which limits the ionic conductivity of the pristine system. Further, we infer that substitution of P, Al, or Ge at Si sites induces polarization in the system, resulting in bond softening. Consequently, the jumps are increased owing to the lower activation barrier in realistic conditions. Finally, we find that simultaneous substitution of P at Si and the vacancies of Li are the most promising point defects for enhancing the ionic conductivity of LISICON.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.jpcc.0c03551?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.jpcc.0c03551</a>.Stability of configurations doped with Al and Ge and their attempt frequencies; AIMD validation; average attempt frequency and activation barrier (<a class="ext-link" href="/doi/suppl/10.1021/acs.jpcc.0c03551/suppl_file/jp0c03551_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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