Spin-flip-driven giant magnetotransport in A-type antiferromagnet NaCr Te 2

Junjie Wang,Jun Deng,Xiaowei Liang,Guoying Gao,Tianping Ying,Shangjie Tian,Hechang Lei,Yanpeng Song,Xu Chen,Jian-gang Guo,Xiaolong Chen
DOI: https://doi.org/10.1103/physrevmaterials.5.l091401
IF: 3.98
2021-09-29
Physical Review Materials
Abstract:The value of angle-dependent magnetoresistance (MR) synergistically and simultaneously depends on the magnitudes of magnetoresistance (MR) and magnetocrystalline anisotropy energy (MAE). In a magnetic material, the concurrence of gigantic angle-dependent MR and MR signals is rather difficult due to weak spin-lattice coupling and small MAE. Here we report the considerable magnetotransport effect in layered A-type antiferromagnetic (AFM) NaCrTe2 by realigning the spin configurations. Above 3 (8) T, the antiparallel spins of adjacent layers experience a spin-flip transition to a parallel alignment along the c axis (ab plane). Theoretical calculations reveal that the energy band gap narrows from 0.39 to 0.11 eV, accompanying a transition from semiconductor (high-R state) and half semiconductor (low-R state), respectively. Thus, a gigantic negative MR ratio of −90% is obtained at 10 K. More importantly, the decrement of R along H∥c is far quicker than that of H∥ab because the MAE of the Ising-like ferromagnetic (FM) state is 1017μeV/Cr3+ lower than that of XY-like FM. The distinct trends result in the angle-dependent MR ratio of 732% at 10 K. These findings unravel the intrinsic origin of magnetoresistance in NaCrTe2 and will stimulate us to explore the H-sensitive transport property in more AFM materials.
materials science, multidisciplinary
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