Abstract:The origins of the relaxor behavior and low-temperature dielectric relaxation processes in AgNb7O18 ceramic were studied and a new relaxation mechanism was proposed through combined bond valence energy landscape (BVEL) calculation and equivalent circuit modeling (ECM). The BVEL calculation suggests that the Ag1 displacement subjects to a double-well potential that originates from the anisotropic coordination symmetry and low coordination number at Ag1 site. The relaxor ferroelectric behavior, observed at 200 K ≤ T ≤ 270 K, is sensitive to thermal history and is ascribed to the Ag1 hopping in double-well potential. The temperature dependence of the matrix capacitance (obtained by ECM) is very similar with that of b axis (obtained by in situ XRD) at 123 K < T < 174 K. Therefore, a phase transition being responsible for the low-temperature dielectric relaxation is assumed. The combined BVEL and ECM techniques performed in this work are therefore quite helpful to understand the complicated relaxor phenomena and explore new relaxors.

Origins of dielectric relaxations in AgNb7O18 ceramic