Abstract:Bidirectionally high‐thermally conductive graphene thick film is achieved by a reliable seamless bonding assembly strategy. The graphene thick film with 250 μm demonstrates record κ∥ of 925.75 W (mK)−1 and κ⊥ of 7.03 W (mK)−1, meanwhile exhibiting remarkable stability even after hundreds of cycled harsh temperature shocks from 77 to 573 K, ensuring its environmental adaptability for extreme thermal management. With the rapid development of high‐power electronics in aerospace, communication, and energy storage systems, the huge heat flux poses an increasing threat to the safety of electronic devices. Compared with thin films of a few micro thicknesses, high‐quality graphene thick film (GTF) exceeding hundreds of microns thickness is a promising candidate to solve thermal management challenges owing to higher heat‐flux. However, traditional GTF usually has lower thermal conductivity and weak mechanical properties attributed to disordered sheet alignment and frail interfacial adhesion. Here, a seamless bonding assembly (SBA) strategy is proposed to attain GTF over record hundreds of microns with robust coalescence interfaces. For the GTF‐SBA with ≈250 μm thickness, the in‐plane and through‐plane thermal conductivities are 925.75 and 7.03 W m−1 K−1, approximately two times and 12 times those of the GTF prepared by traditional adhesive assembly method, respectively. Furthermore, the GTF‐SBA demonstrates remarkable stability even after cycled harsh temperature shocks from 77 to 573 K, ensuring its environmental adaptability for long‐term service in extreme conditions. These findings provide valuable insights into the interfacial design of graphene bulk materials and highlight the potential applications of high‐performance graphene‐based materials for extreme thermal management demands.

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