Atomic-scale insights into sensing mechanisms of platinum-doped tin dioxide as highly selective hydrogen sensor

Zhang Zhang,Zhaohui Weng,Wei Xue,Ningbo Liao,Duo Yang,Ping Yang
DOI: https://doi.org/10.1016/j.ijhydene.2024.12.060
IF: 7.2
2024-12-12
International Journal of Hydrogen Energy
Abstract:A selective, sensitive, fast and accurate hydrogen sensor is urgently needed to overcome enormous challenges for enabling safe monitoring and early warning of leaks in applications of hydrogen energy. Metal-oxide semiconductors (MOS) are of great interest as new level of hydrogen sensors because of their high selectivity and sensitivity, in particular, tin dioxide (SnO 2 ) attracted much attention with superior electrochemical stability and durability. Nevertheless, it is quite challenging to accurately explore nano-scale sensing mechanisms MOS materials by experimental technology. In this work, the effect of Pt-doping on gas sensing mechanisms of SnO 2 is explored via first-principles. The calculated adsorption and electronic properties indicate a significantly stronger adsorption of H 2 on Pt–SnO 2 over the other gases, with breaking of H–H bonds in H 2 , formations of new H–Pt/H–O bonds and obvious changes in electronic structure, and oxygen of Pt–SnO 2 presents large contribution to chemical adsorptions of H 2 . The calculated I–V curves suggest that the doping of Pt element results in large compact on conductivity of the system, and dynamic diffusion coefficients at different temperatures demonstrate fast response and superior selectivity of Pt–SnO 2 toward H 2 . This work offers conceptual perspective for developing MOS-based gas sensor.
energy & fuels,electrochemistry,chemistry, physical
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