Overlapping-Mode Extended Interaction Klystrons for Broadband Terahertz Power Amplifiers

Naining Guo,Zhaowei Qu,Qianzhong Xue,Kegang Liu,Wenke Song,Xu Zhang,Ding Zhao,Haibing Ding,Jinjun Feng

DOI: https://doi.org/10.1109/ted.2022.3147438

IF: 3.1

2022-03-01

IEEE Transactions on Electron Devices

Abstract:The design approaches of the overlapping-mode extended interaction klystrons (EIKs) are presented to satisfy the requirement for broadband terahertz power amplifiers. Since all the cavities are designed and tuned to operate in multiple-cavity modes, the overlapping-mode EIKs can provide high output power over a wider frequency band. The circuit characteristics of the overlapping-mode EIKs are studied, including the dispersion curve, the coupling coefficient, and the frequency interval between cavity modes. Moreover, a six-cavity EIK operating at 0.34 THz is designed to demonstrate the broadband output capability of the overlapping-mode EIKs. The $2\pi $ -mode and its adjacent axial mode, the $\pi $ /13-mode, are chosen as the operating modes of the designed EIK. The 3-D particle-in-cell (PIC) simulation predicts a 3-dB bandwidth of 2.9 GHz for the designed power amplifier at a small-signal level or in saturation. Driven by an input power of 10 mW, the amplifier can provide the output power of 3.9 W, and the corresponding gain is 25.9 dB. When the input power is 150 mW, the amplifier is partially saturated and can provide the output power of 33 W with a corresponding electronic efficiency of 1.23%.

engineering, electrical & electronic,physics, applied