Abstract:Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells attract intense interest both in research and industry fields due to their high power conversion efficiencies, low costs, and high stabilities. The power conversion efficiency of a CIGS solar cell is limited by the deep level defects distributed on the surface and in the bulk of the CIGS solar cells. In this work, we elucidate that the deep level defects are significantly suppressed during the CdS buffer layer deposition process via a chemical bath deposition (CBD) method. The X-ray photoelectron spectroscopy results show the incorporation of cadmium (Cd) into CIGS during the CdS deposition process, which is the main reason for the reduced deep level nonradiative recombination defects. Raman spectroscopy and secondary ion mass spectroscopy further reveal the reduction of nonradiative recombination deep level defects due to Cd incorporation. Besides, the high-resistivity i-ZnO layer provides field-effect passivation, leading to the enhancement of the power conversion efficiency from 11.0 to 12.1%. By a combination of the incorporation of Cd, i-ZnO passivation, and optimization of the band gap of CIGS, the champion power conversion efficiency of the CIGS solar cell is as high as 15.5% without an antireflective layer and alkali metal postdeposition treatment. Our results provide insights into the effect of the CdS buffer layer, CBD method, and high-resistivity i-ZnO layer on the performance of CIGS solar cells, which is quite helpful to further improve the power conversion efficiency of CIGS solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01930?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01930</a>.CIGS coevaporation deposition process; CdS CBD deposition; characterizations; top-view SEM images of CdS deposited via chemical bath deposition for different times; XRD pattern of CdS fabricated via a CBD method at 80 °C for 12 min; parameters for the simulations of the performance of CIGS solar cells with different thicknesses of i-ZnO; and EQE curves of CIGS solar cell obtained at 0, 0.5, −0.5, and 1 V DC voltage bias (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01930/suppl_file/ae0c01930_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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