Femtosecond electron beam probe of ultrafast electronics

Maximilian Mattes,Mikhail Volkov,Peter Baum

DOI: https://doi.org/10.1038/s41467-024-45744-8

IF: 16.6

2024-02-26

Nature Communications

Abstract:Abstract The need for ever-faster information processing requires exceptionally small devices that operate at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that surpasses the device under test in speed and spatial resolution. Consequently, such a tool cannot be provided by electronics itself. Here we show how ultrafast electron beam probe with terahertz-compressed electron pulses can directly sense local electro-magnetic fields in electronic devices with femtosecond, micrometre and millivolt resolution under normal operation conditions. We analyse the dynamical response of a coplanar waveguide circuit and reveal the impulse response, signal reflections, attenuation and waveguide dispersion directly in the time domain. The demonstrated measurement bandwidth reaches 10 THz and the sensitivity to electric potentials is tens of millivolts or −20 dBm. Femtosecond time resolution and the capability to directly integrate our technique into existing electron-beam inspection devices in semiconductor industry makes our femtosecond electron beam probe a promising tool for research and development of next-generation electronics at unprecedented speed and size.

multidisciplinary sciences

What problem does this paper attempt to address?

The paper attempts to address the issue of how to achieve high-resolution spatial and temporal diagnostics for ultrafast electronic devices operating in the terahertz (THz) and even petahertz (PHz) frequency ranges in modern high-speed information processing and data transmission. Currently, most electronic devices operate in the gigahertz (GHz) band, while cutting-edge technology is advancing towards the terahertz and even petahertz bands. For example, terahertz technology and millimeter waves are the foundation of the upcoming sixth-generation communication standard (6G), and high-speed transistors, hybrid photonic platforms, or terahertz components are also beginning to integrate the fields of electronics and optics.

However, at such high frequencies, traditional electronic methods cannot provide the required bandwidth and temporal resolution to characterize the local electromagnetic fields and their dynamic changes in these ultrafast electronic devices. Therefore, the paper proposes a new method using femtosecond electron beam probe technology, which can directly detect the local electromagnetic fields inside electronic devices with femtosecond temporal resolution, micron spatial resolution, and millivolt-level sensitivity. This method can measure the transient response of electronic devices under normal operating conditions and can be integrated into existing electron beam detection equipment in the semiconductor industry, becoming an important tool for researching and developing the next generation of electronic devices.