3D porous carbon nitride composited oxygen vacancy‐induced indium oxide for high photocatalytic nitrogen fixation on the interfacial surface
Ting Sun,Ping Gao,Shixian Zhang,Zhiren Wu,Jun Liu,Xinshan Rong
DOI: https://doi.org/10.1002/aoc.7117
IF: 3.9
2023-04-25
Applied Organometallic Chemistry
Abstract:Semiconductor photocatalysis can utilize solar energy for clean energy conversion, but the catalytic efficiency is often unsatisfactory due to limited photo response and efficient separation of photogenerated carriers. In this work, 3D porous carbon nitride (3DPCN) composited oxygen vacancy‐induced indium oxide (3DPCN/VO‐In2O3) was successfully prepared and analyzed by some characterization methods. Meanwhile, the performance of photocatalytic nitrogen fixation was further investigated. XPS, XRD confirmed the successful preparation of the composites and revealed the electron flow direction, SEM, TEM showed the surface structure of the composites, DRS, TPD revealed the energy band position and adsorption mechanism, EPR characterization confirms the successful construction of oxygen vacancies EIS, PL and other photochemical characterization results showed that 3DPCN/VO‐In2O3 band gap is narrower and more effective in capturing light than other materials, improving the photocatalytic nitrogen fixation ability. The test results show that the nitrogen fixation capacity of 3DPCN/VO‐In2O3 can reach a maximum value of 156 within 2 hours. This result demonstrates that the modification of carbon nitride improves its nitrogen fixation effect, and the introduction of oxygen vacancy‐induced In2O3 improves the light absorption performance and is advantageous to the separation of photogenerated charge carriers.
chemistry, inorganic & nuclear, applied