What problem does this paper attempt to address?

The paper primarily explores the applications and challenges of two-dimensional (2D) semiconductors (particularly transition metal dichalcogenides) in integrated circuits. Specifically, the paper attempts to address the following key issues: 1. **Development stages and future goals of 2D semiconductor technology**: The paper aims to provide a review of the current progress and future directions of high-performance field-effect transistors (FETs) and integrated circuits (ICs) based on 2D semiconductors. 2. **Contact resistance issue**: Contact resistance (Rc) is crucial for the on-state current of short-channel devices. Although there are some methods to significantly reduce the Rc of 2D semiconductors, the contact length (Lc) still struggles to meet the requirements of future technology nodes. 3. **Doping technology**: The doping efficiency of 2D semiconductors is much lower than that of bulk materials, necessitating the development of controllable and reliable doping techniques. Current main methods include substitutional doping and surface charge transfer doping, but challenges remain in precisely controlling the doping levels. 4. **Integration of ultra-thin insulating layers**: Despite significant progress in integrating ultra-thin insulating layers in 2D semiconductor devices, the interface trap density (Dit) remains high, leading to high power consumption and reliability issues. 5. **Large-scale integration density**: Although the performance of 2D transistors has improved, the integration density of 2D integrated circuits is still low. For example, a 1-bit microprocessor based on MoS2 contains only 115 transistors, whereas the most advanced CMOS CPUs contain over 1 billion transistors. 6. **Manufacturing processes and equipment integration**: To achieve large-scale production of 2D semiconductors, a series of standard equipment integration processes need to be developed, including interconnection, stacking, etching, thin-film deposition, etc., and ensure these processes are compatible with CMOS technology to avoid structural damage and interface contamination. 7. **Circuit design and simulation tools**: There is a lack of comprehensive circuit-level simulation tools to evaluate circuit performance, necessitating the use of design technology co-optimization (DTCO) methods to enhance the performance of 2D FET technology. By addressing the above issues, the paper aims to promote the transition of 2D semiconductor technology from the laboratory to the production line, thereby achieving its practical application in advanced nodes.

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