Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

Kaining Yang,Xiang Gao,Yaning Wang,Tongyao Zhang,Yuchen Gao,Xin Lu,Shihao Zhang,Jianpeng Liu,Pingfan Gu,Zhaoping Luo,Runjie Zheng,Shimin Cao,Hanwen Wang,Xingdan Sun,Kenji Watanabe,Takashi Taniguchi,Xiuyan Li,Jing Zhang,Xi Dai,Jian-Hao Chen,Yu Ye,Zheng Han
DOI: https://doi.org/10.1038/s41467-023-37769-2
IF: 16.6
2023-04-15
Nature Communications
Abstract:The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 10 7 by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron–electron (e–e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.
multidisciplinary sciences
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