Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

Yongjie Liu,Chen Tao,Yu Cao,Liangyan Chen,Shuxin Wang,Pei Li,Cheng Wang,Chenwei Liu,Feihong Ye,Shengyong Hu,Meng Xiao,Zheng Gao,Pengbing Gui,Fang Yao,Kailian Dong,Jiashuai Li,Xuzhi Hu,Hengjiang Cong,Shuangfeng Jia,Ti Wang,Jianbo Wang,Gang Li,Wei Huang,Weijun Ke,Jianpu Wang,Guojia Fang
DOI: https://doi.org/10.1038/s41467-022-35218-0
IF: 16.6
2022-12-02
Nature Communications
Abstract:Formamidinium lead iodide (FAPbI 3 ) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI 3 perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI 3 , two-dimensional FA 2 FA n-1 Pb n I 3n+1 , and three-dimensional α-FAPbI 3 , can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI 3 -based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.
multidisciplinary sciences
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