Abstract:SrRuO3 (SRO) thin (~12 nm) films have been grown on KTaO3 (001) substrates by RF magnetron sputtering. The as-prepared films are under enormous in-plane tensile strain, which corresponds to the elastic energy of ~1.5 MJ. Annealing in oxygen at 900 C for 6 hr relaxes strain, partially lowering the elastic energy. The surface topography shows a transition from granularity as the Ar+O2 pressure increases from 5 mTorr to 200 mTorr, with a simultaneous change in the average surface roughness from 4 nm to 0.8 nm. Annealing transforms the topography to island-type and enhances surface roughness. The films deposited at 5 mTorr are semiconducting, and annealing further enhances the resistivity. The -T of films grown at 200 mTorr shows a metallic behavior with an inflection in the -T at TC~150 K, FM transition. The low-temperature resistivity upturn shows the disordered nature of these films. The eq. ρ(T)=1/(σ_0+aT^(1/2)+a_1 T^(p/2) )+bT^α (p=2 & =2) describes the transport behavior from 2K to 300K of 5 mTorr deposited films. In the 200 mTorr deposited film, the above eq. is valid at T<95 K with p=2 and =1.5. At TC

Tensile strain-induced disorder and weak localization in SrRuO 3 thin films on (100) KTaO 3 substrates