Simple and Robust Phenoxazine Phosphonic Acid Molecules as Self-assembled Hole Selective Contacts for High Performance Inverted Perovskite Solar Cells

Zhaoning Li,Qin Tan,Guocong Chen,Han Gao,Jiafeng Wang,Xusheng Zhang,Jingwei Xiu,Wei Chen,Zhubing He
DOI: https://doi.org/10.1039/d2nr05677a
IF: 6.7
2022-12-20
Nanoscale
Abstract:For inverted perovskite solar cells (PSCs), the interfacial defect and mismatched energy level between perovskite absorber and charge selective layer restrain the further improvement of photovoltaic performance. The interfacial modification is a powerful tool for defect passivation and energy level turning by developing new charge selective materials. Herein, we report three new molecules 2BrCzPA, 2BrPTZPA and 2BrPXZPA as self-assembled hole selective contacts (SA-HSCs) by an economical and efficient synthetic procedure. Benefit from the stronger electron donating ability of phenothiazine and phenoxazine than carbazole, 2BrPTZPA and 2BrPXZPA represent more matched energy level and decreased energy loss. In addition, the ITO substrate coating by 2BrPTZPA and 2BrPXZPA could induce higher quality perovskite crystal growth without obvious grain boundaries in the vertical direction. Consequently, the corresponding inverted PSCs with decreased trap state density achieve high power convention efficiency (PCE) of 22.06% and 22.93% (citified 22.38%) for 2BrPTZPA and 2BrPXZPA, respectively. Furthermore, 2BrPXZPA-based device with encapsulation retains 97% initial efficiency after 600 h maximum power point tracking under one sun continuous illumination. Finally, the 2BrPXZPA also has been used for NiOx surface modification, and the inverted PSC based on NiOx/2BrPXZPA bilayer achieves a higher PCE of 23.66% with an open circuit voltage of 1.21 V. This work extends the design strategy of SA-HSCs for efficient and stable inverted PSCs and promote the commercialization process.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?