Abstract:When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest Landau levels that follow strict selection rules dictated by angular momentum conservation. Here, we show a qualitative deviation from this behavior in high-quality graphene devices exposed to terahertz (THz) radiation. We demonstrate the emergence of a pronounced THz-driven photoresponse, which exhibits low-field magnetooscillations governed by the ratio of the frequency of the incoming radiation and the quasiclassical cyclotron frequency. We analyze the modifications of generated photovoltage with the radiation frequency and carrier density and demonstrate that the observed photoresponse shares a common origin with microwave-induced resistance oscillations discovered in GaAs-based heterostructures; however, in graphene it appears at much higher frequencies and persists above liquid nitrogen temperatures. Our observations expand the family of radiation-driven phenomena in graphene, paving the way for future studies of nonequilibrium electron transport.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c01918?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c01918</a>.Details on device fabrication, TIMO for different THz frequencies, temperatures, and contact pairs, photogalvanics at <i>B</i> = 0, and magnetotransport (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c01918/suppl_file/nl0c01918_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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