Abstract:In this work, all kinds of intrinsic point defects, unintentional N and H impurities and possible complex defects between impurities and native defects in α- and β-Bi2O3 with different growth conditions are systematically investigated using hybrid density functional calculations. And then, the n- or p-type doping mechanisms in α- and β-Bi2O3 are explored and discussed. It is found that α-Bi2O3 presents the n-type conductivity under O-poor conditions. The unintentional H interstitials as the shallow donors should be majorly responsible for the n-type conductivity character. While under O-rich conditions, α-Bi2O3 displays the p-type conductivity, and the unintentional complex defects VBi1+2H as the shallow acceptors should be the primary origins of the p-type conductivity. The hydrogenation of the Bi vacancy in α-Bi2O3 not only significantly lowers the formation energy of the Bi vacancy but also markedly decreases its acceptor transition level. This well understands the experimental observation that α-Bi2O3 changes from n-type to p-type conductivity with increasing O partial pressure. Compared to α-Bi2O3, β-Bi2O3 always presents the n-type conductivity behaviour regardless of the growth conditions. The native O1 vacancies (VO1) and unintentional H interstitials in β-Bi2O3 are shallow and excellent donors. They are responsible for the n-type conductivity and further perfectly explain the observed unintentional n-type conductivity character in β-Bi2O3 experiments. The unintentional n-type conductivities in both α- and β-Bi2O3 can be enhanced via Group VII element doping, especially for F-doped β-Bi2O3 under O-poor conditions. However, it cannot be translated to p-type conductivity using Group II element doping because of donor defects' strong charge compensation effect. The understanding of the defect physics in α- and β-Bi2O3 could inspire more significant studies on developing Bi2O3-based photocatalysts.

First-Principles Characterization of Bi-based Photocatalysts: Bi12TiO20, Bi2Ti2O7, and Bi4Ti3O12

First Principles Calculations of the Electronic Structure and Optical Properties of Pure and (nb, N) Co-Doped Anatase

Enhancing Visible-Light Photocatalytic Activity of Α-Bi 2 O 3 Via Non-Metal N and S Doping

Density functional characterization of Bi-based photocatalysts: BiTaO4, Bi4Ta2O11 and Bi7Ta3O18

Band Structures of TiO 2 Doped with N, C and B

Photocatalytic and Photophysical Properties of a Novel Series of Solid Photocatalysts, BiTa1−Nb O4 (0⩽X⩽1)

First-principles study of C-doped anatase TiO2

Facile Fabrication of Heterostructured Bismuth Titanate Nanocomposites: the Effects of Composition and Band Gap Structure on the Photocatalytic Activity Performance

In-situ metallic Bi deposited Bi12TiO20 with improved photocatalytic activity

Study of the Structure, Electronic and Optical Properties of BiOI/Rutile-TiO2 Heterojunction by the First-Principle Calculation

First-principles calculations on electronic, optical and photocatalytic properties of BiNbO4

Intrinsic point defects and the n- and p-type dopability in α- and β-Bi2O3 photocatalysts

Preparation and Characterization of Polycrystalline Bismuth Titanate Bi12TiO20 and Its Photocatalytic Properties under Visible Light Irradiation

Theoretical insight into water splitting mechanism of B doped tri-s-triazine-based g-C3N4/m-BiVO4(001) heterojunction photocatalyst

Study of Structural, Electronic and Optical Properties of Tungsten Doped Bismuth Oxychloride by Dft Calculations

A novel Bi1.5Zn1-xCuxTa1.5O7 photocatalyst: Water splitting properties under visible light and its electronic structures

The origin of enhanced photocatalytic activity in g-C3N4/TiO2 heterostructure revealed by DFT calculations

Electronic Characteristics, Stability and Water Oxidation Selectivity of High-Index BiVO4 Facets for Photocatalytic Application: A First Principle Study

First-principles calculation of N:H codoping effect on energy gap narrowing of TiO2

Ab Initio Study on Band-Gap Narrowing in Srtio3 with Nb-C-Nb Codoping

Electronic and optical properties of C-N-codoped TiO2: A first-principles GGA+U investigation