Large tensile-strained BaTiO3 films grown on lattice-mismatched La-doped BaSnO3 bottom electrode

Lizhikun Gong,Ko Marunouchi,Akira Chikamatsu,Hiromichi Ohta,Tsukasa Katayama

DOI: https://doi.org/10.1039/d4ce00197d

IF: 3.756

2024-04-27

CrystEngComm

Abstract:Perovskite BaTiO3 has been widely studied and utilized in various applications owing to its high permittivity, ferroelectricity, non-toxicity, and stability. However, its low ferroelectric-paraelectric phase transition temperature (TC, 120 °C) limits its application. The TC can be increased by applying an epitaxial strain provided by a lattice-mismatched substrate. However, applying large tensile strain on BaTiO3 is difficult, especially when a bottom electrode is present. In this study, we successfully fabricated large tensile-strained BaTiO3 films using La-doped BaSnO3 bottom electrodes. A tensile strain 2% was achieved, which is three times larger than that previously reported for BaTiO3 films grown on bottom electrodes. By adjusting the thickness of BaTiO3 layer between 20 and 300 nm, the tensile strain can be varied within the range of 0.6–2%. Remarkably, the TC of the obtained films exceeds 400 °C. In addition, although it was thought that tensile-strained BaTiO3 films have ferroelectric polarization in the in-plane direction, the 0.6% tensile-strained film showed ferroelectric polarization in the out-of-plane direction. This finding reveals that the ferroelectric polarization direction was slightly tilted away from the predominant in-plane direction of the film.

chemistry, multidisciplinary,crystallography