Abstract:The 2D and 3D contour plots of BaPbO3 at 0 and 80 GPa depict a mixed type of bonding within the structure. At 0 GPa, Ba─O and Ba─Pb exhibit strong covalent bonding, while Ba─Pb displays strong ionic bonding. As pressure increases to 80 GPa, the 3D contour lines decrease due to the shifting of Ba─p states in the core valence band. Consequently, this shift transforms the materials nature from metallic to a potential small indirect band‐gap semiconductor. This study pioneers the examination of BaPbO3 under pressure, offering valuable insights for future research to explore the materials properties using advanced methodologies. Employing density functional theory within the Wien2k code, first‐principle calculations are conducted to explore the impact of applied pressure up to 80 GPa on the structural, mechanical, thermal, and electronic characteristics of BaPbO3. Demonstrating metallic behavior with ductile attributes, BaPbO3 exhibits a decreasing anisotropic nature under escalating pressure. Evaluation of cubic elastic constants, optimization curves, and enthalpy of formation indicates the compound's mechanical and thermodynamic stability under high pressure conditions. Calculated values of C11 and C44 reflect heightened resistance to unidirectional compression and increased stiffness under pressure. These mechanical properties position BaPbO3 as a promising candidate for diverse industrial applications across varying pressure ranges, including utilization in piezoelectric materials (0–20 GPa) and high‐pressure sensors. Additionally, charge density contours suggest a combination of ionic (Ba─Pb) and covalent bonding (Pb─O) within the compound's constituent atoms. The material can exhibit potential applications as a piezoelectric sensor at 0–20 GPa, high‐pressure actuators ≈20 GPa, and as a high melting temperature resistive substrate for laser welding and cutting materials.

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