Abstract:Abstract: Organic-inorganic hybrid perovskites have attracted substantial attention because of their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here, we proposed a new type of thin-film field-effect transistor (TFT) with an organic-inorganic hybrid perovskite channel layer. The organic-inorganic hybrid perovskite material has advantages of a high mobility like that of an inorganic semiconductor and the easy process like an organic layer. A TFT using CH3NH3PbI3 as the semiconducting channel was demonstrated. The organic-inorganic hybrid perovskite thin fim with a grain size of 1µm and a smooth surface has been achieved as shown in fig.1. A clear electrical-field induced effect can be observed in the C-V measurements. This type of TFT shows an ambipolar performance in its transfer characteristics (as shown in fig.2 ) and the V shape of the transfer curves is similar to those of other types of ambipolar transistors. The hole and electron field effect mobilities (µFE) are derived as 5.1 cm2/Vs and 5.2cm2/Vs, respectively. The on/off current ratio is nearly 106. This Organic-inorganic hybrid perovskite TFT can be processed by cheap, low-temperature techniques, which suggest that it may be suitable for applications that require low cost, a large area, and the flexibility. Molecular engineering of the organic and inorganic components of the hybrids perovskite is expected to further improve device performance for high speed application. Figure 1

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