Phonon-assisted upconversion photoluminescence of monolayer MoS_2 at elevated temperatures

Fengkai Meng,Xiaodong Yang,Jie Gao,fengkai meng

DOI: https://doi.org/10.1364/oe.495824

IF: 3.8

2023-08-12

Optics Express

Abstract:Fengkai Meng, Xiaodong Yang, Jie Gao Upconversion photoluminescence (UPL) lies at the heart of optical refrigeration and energy harvesting. Monolayer transition metal ... [Opt. Express 31, 28437-28443 (2023)]

optics

What problem does this paper attempt to address?

High-temperature phonon-assisted upconversion photoluminescence of monolayer WSe2

Fengkai Meng,Xiaodong Yang,Jie Gao

DOI: https://doi.org/10.1063/5.0156364

IF: 4

2023-07-03

Applied Physics Letters

Abstract:Phonon-assisted upconversion photoluminescence (UPL) is an anti-Stokes process emitting photons of energy higher than the excitation photons, with upconversion energy gain provided by optical phonons. Atomically thin transition metal dichalcogenides provide a promising platform for exploring the phonon-assisted UPL process due to their strong phonon–exciton interactions. Here, high-temperature phonon-assisted UPL process in monolayer WSe2 is investigated, aiming to understand the role of phonon population and the number of phonons involved in the UPL process at elevated temperatures. It is demonstrated that the integrated intensity of UPL emission significantly increases by two orders of magnitude as the temperature rises from room temperature of 295 to 476 K, which is distinguished from the photoluminescence emission usually suffering from thermal quenching. The observed growth of UPL emission intensity is attributed to both the increased phonon population and the reduced number of phonons required at elevated temperatures. Our study paves the way toward near-infrared light detection, anti-Stokes energy harvesting, optical refrigeration, and temperature sensing.

physics, applied
Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Xingwang Zhang,Shinhyuk Choi,Dake Wang,Carl H. Naylor,A. T. Charlie Johnson,Ertugrul Cubukcu

DOI: https://doi.org/10.1021/acs.nanolett.7b02777

IF: 10.8

2017-01-01

Nano Letters

Abstract:Atomically thin transition metal dichalcogenides like MoS2 monolayers exhibit unique luminescent properties. However, weak quantum yield and low light absorption hinder their practical applications in two-dimensional light emitting devices. Here, we report 1300 times enhancement in photoluminescence emission from a MoS2 monolayer via simultaneous Fano resonances in a dielectric photonic crystal. The spatially extended double Fano resonance scheme allows resonant enhancement of both the MoS2 absorption and emission. We also achieve unidirectional emission within a narrow divergence angle of 5° by engineering the Fano resonance angular dispersion. Our approach provides a new platform for efficient light sources with high directionality based on emerging two-dimensional materials.
Phonon-assisted Upconversion Photoluminescence in Monolayer MoSe2 and WSe2

Xu Weigao,Zhao Yanyuan,lt,strong gt,Shen Chao lt,Zhang Jun,Xiong Qihua

DOI: https://doi.org/10.6023/A15030216

2015-01-01

Acta Chimica Sinica

Abstract:Phonon-assisted upconversion photoluminescence is the basis of laser cooling effect in solids. Compared to conventional cooling methods, laser cooling has many advantages such as compactness, high efficiency, free of vibrational disturbance and refrigerant-free, etc. Exploring more semiconducting materials in which a net cooling effect can be observed is an important area among the laser cooling community. Monolayer two-dimensional transition metal dichalcogenides (TMDs) like MoSe2 and WSe2 are direct band gap semiconductors. The perfect crystal structure and high extraction efficiency (due to thickness at atomic level) guarantee them the possibility to be potential candidates for laser cooling. In this work, with a Ti-sapphire tunable laser (pumped by a 532 nm laser), we studied the upconversion photoluminescence and its wavelength-dependence. In detail, we implemented experiments on laser power-dependent photoluminescence intensity, the linearity fitting results (at low power) show that it is a phonon-assisted upconversion photoluminescence process; furthermore, this mechanism is also verified from the temperature-dependent upconversion photoluminescence intensity. Further experiments on the investigation of which kinds of phonons are involved in the upconversion process and its efficiency, as well as the design of a sample structure that is free of background absorbance, are still required to help to tell whether net laser cooling can be achieved, or how it can be achieved in monolayers TMDs.
Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

Xingwang Zhang,Nicolas Biekert,Shinhyuk Choi,Carl H Naylor,Chawina De-Eknamkul,Wenzhuo Huang,Xiaojie Zhang,Xiaorui Zheng,Dake Wang,A T Charlie Johnson,Ertugrul Cubukcu

DOI: https://doi.org/10.1021/acs.nanolett.7b04355

IF: 10.8

2018-01-01

Nano Letters

Abstract:Active tunability of photonic resonances is of great interest for various applications such as optical switching and modulation based on optoelectronic materials. Manipulation of charged excitons in atomically thin transition metal dichalcogenides (TMDCs) like monolayer MoS2 offers an unexplored route for diverse functionalities in optoelectronic nanodevices. Here, we experimentally demonstrate the dynamic photochemical and optoelectronic control of the photonic crystal Fano resonances by optical and electrical tuning of monolayer MoS2 refractive index via trions without any chemical treatment. The strong spatial and spectral overlap between the photonic Fano mode and the active MoS2 monolayer enables efficient modulation of the Fano resonance. Our approach offers new directions for potential applications in the development of optical modulators based on emerging 2D direct band gap semiconductors.
Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Zhi-Qian Wu,Jing-Liang Yang,Nallappagar K. Manjunath,Yue-Jiao Zhang,Si-Rui Feng,Yang-Hua Lu,Jiang-Hong Wu,Wei-Wei Zhao,Cai-Yu Qiu,Jian-Feng Li,Shi-Sheng Lin

DOI: https://doi.org/10.1002/adma.201706527

IF: 29.4

2018-01-01

Advanced Materials

Abstract:2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a "gap-mode" plasmon-enhanced monolayer MoS2 fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS2. With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS2 fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W-1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS2 photodetectors.
Organic Polymorphs with Fluorescence Switching: Direct Evidence for Mechanical and Thermal Modulation of Excited State Transitions.

Shan Jiang,Jiayu Wang,Qingkai Qi,Jingyu Qian,Bin Xu,Fangfei Li,Qiang Zhou,Wenjing Tian

DOI: https://doi.org/10.1039/c9cc00234k

IF: 4.9

2019-01-01

Chemical Communications

Abstract:Herein, we provide a direct observation of the modulation of the excited state transition under mechanical and thermal stimuli in the solid state by two organic polymorphs based on a tetraphenylethene derivative (APMOB). It enriches the insight in the research of stimuli responsive luminescent materials.
Simultaneous Enhancement and Modulation of Upconversion by Thermal Stimulation in Sc2Mo3O12 Crystals.

Hua Zou,Bing Chen,Yifeng Hu,Qiwei Zhang,Xusheng Wang,Feng Wang

DOI: https://doi.org/10.1021/acs.jpclett.0c00628

2020-01-01

Abstract:Rational control of photoluminescence against a change in temperature is important for fundamental research and technological applications. Herein, we report an anomalous temperature dependence of upconversion luminescence in Yb/Ho co-doped Sc2Mo3O12 crystals. By leveraging negative thermal expansion of the crystal lattice, energy transfer between the lanthanide dopants is promoted as the temperature is increased from 303 to 573 K, resulting in an similar to 5-fold enhancement of the emission. Meanwhile, the emission profile is also substantially altered due to the concurrent thermal quenching of selective energy states, corresponding to a clear shift in color from green to red. Via correlation of the red-togreen emission intensity ratio of Ho' dopant ions with temperature, a ratiometric luminescence thermometer is constructed with a maximum sensitivity of 2.75% at 543 K-1. As the Sc2Mo3O12 crystals are thermally stable and nonhygroscopic, our findings highlight a general approach for highly reversible control of upconversion by temperature in ambient air.
Extending the Spectral Responsivity of MoS2 Phototransistors by Incorporating Up‐Conversion Microcrystals

Youwei Zhang,Jiao Wang,Bing Wang,Jinhai Shao,Jianan Deng,Chunxiao Cong,Laigui Hu,Pengfei Tian,Ran Liu,Shi-Li Zhang,Zhi-Jun Qiu

DOI: https://doi.org/10.1002/adom.201800660

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:Layered 2D semiconductors are characterized by unique photoelectric properties and, therefore, constitute a new class of basic building block for next-generation optoelectronics. However, their wide bandgaps limit the spectral responsivity to a narrow range. Here, a facile approach is demonstrated by integrating beta-NaYF4:Yb3+, Er3+ up-conversion microcrystals (UCMCs) with monolayer-MoS2 phototransistors to break this bandgap-imposed barrier and to drastically extend the responsivity range. In essence, the UCMCs up-convert a near-infrared excitation at 980 nm to visible light of photons with energy matching the large bandgap (i.e., 1.8 eV) of monolayer-MoS2, thereby activating the phototransistor with remarkable photocurrent and minimum interference. This approach leads to preservation of the excellent electrical merits of monolayer-MoS2 and simultaneous retention of its low dark current and high photoresponsivity to the above-bandgap lights. Significantly, an enhancement by over 1000 times is achieved for both responsivity and specific detectivity at 980 nm excitation. Moreover, the rate of response is kept identical to that when the MoS2 phototransistor is excited by a visible light. Therefore, integrating with UCMCs can enable the emerging 2D semiconductors of wide bandgap to respond to infrared excitations with high efficacy and without sacrificing their performance in the visible region.
High-enhancement photoluminescence of monolayer MoS_2 in hybrid plasmonic systems

Yan Huang,Ruoying Kanyang,Cizhe Fang,Xiaoxi Li,Xiangyu Zeng,Yibo Wang,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1364/ao.517514

IF: 1.9

2024-03-28

Applied Optics

Abstract:Yan Huang, Ruoying Kanyang, Cizhe Fang, Xiaoxi Li, Xiangyu Zeng, Yibo Wang, Yan Liu, Yue Hao, Genquan Han Monolayer molybdenum disulfide (M o S _2) has a weak light-matter interaction due to ultrathin ... [Appl. Opt. 63, 2704-2709 (2024)]

optics
Emerging photoluminescence in monolayer MoS2.

Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang

DOI: https://doi.org/10.1021/nl903868w

IF: 10.8

2010-01-01

Nano Letters

Abstract:Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

Wajid Ali,Ye Liu,Ming Huang,Yunfei Xie,Ziwei Li

DOI: https://doi.org/10.3390/nano13162349

IF: 5.3

2023-08-16

Nanomaterials

Abstract:Transition metal dichalcogenide (TMD) monolayers and their heterostructures have attracted considerable attention due to their distinct properties. In this work, we performed a systematic investigation of MoS2/WSe2 heterostructures, focusing on their temperature-dependent Raman and photoluminescence (PL) characteristics in the range of 79 to 473 K. Our Raman analysis revealed that both the longitudinal and transverse modes of the heterostructure exhibit linear shifts towards low frequencies with increasing temperatures. The peak position and intensity of PL spectra also showed pronounced temperature dependency. The activation energy of thermal-quenching-induced PL emissions was estimated as 61.5 meV and 82.6 meV for WSe2 and MoS2, respectively. Additionally, we observed that the spectral full width at half maximum (FWHM) of Raman and PL peaks increases as the temperature increases, and these broadenings can be attributed to the phonon interaction and the expansion of the heterostructure’s thermal coefficients. This work provides valuable insights into the interlayer coupling of van der Waals heterostructures, which is essential for understanding their potential applications in extreme temperatures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2

xiaoxu wei,zhihao yu,fengrui hu,ying cheng,linwei yu,xiaoyong wang,min xiao,junzhuan wang,yi shi

DOI: https://doi.org/10.1063/1.4897522

IF: 1.697

2014-01-01

AIP Advances

Abstract:In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS2 under different treatments. We find that by simple ambient annealing treatment in the range of 200 degrees C to 400 degrees C, the PL emission can be greatly enhanced by a factor up to two orders of magnitude. This enhancement can be attributed to two factors: first, the formation of Mo-O bonds during ambient exposure introduces an effective p-doping in the MoS2 layer; second, localized electrons formed around Mo-O bonds related defective sites where the electrons can be effectively localized with higher binding energy resulting in efficient radiative excitons recombination. Time resolved PL decay measurement showed that longer lifetime of the treated sample consistent with the higher quantum efficiency in PL. These results give more insights to understand the luminescence properties of the MoS2. (C) 2014 Author(s).
Emerging Photoluminescence in Monolayer MoS 2

Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang

DOI: https://doi.org/10.1021/nl903868w

IF: 10.8

2010-03-15

Nano Letters

Abstract:Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

Yi-Hsun Chen,Ping-Yuan Lo,Kyle W. Boschen,Guan-Hao Peng,Chun-Jui Huang,Luke N. Holtzman,Chih-En Hsu,Yung-Ning Hsu,Madisen Holbrook,Wei-Hua Wang,Katayun Barmak,James Hone,Pawel Hawrylak,Hung-Chung Hsueh,Jeffrey A. Davis,Shun-Jen Cheng,Michael S. Fuhrer,Shao-Yu Chen

2024-09-05

Abstract:In this work, we report a pronounced light upconversion in few-layer transition metal dichalcogenides. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light.

Materials Science,Mesoscale and Nanoscale Physics
Photoluminescence Enhancement of MoS2/CdSe Quantum Rod Heterostructures Induced by Energy Transfer and Exciton-Exciton Annihilation Suppression.

Yang Luo,Hangyong Shan,Xiaoqing Gao,Pengfei Qi,Yu Li,Bowen Li,Xin Rong,Bo Shen,Han Zhang,Feng Lin,Zhiyong Tang,Zheyu Fang

DOI: https://doi.org/10.1039/c9nh00802k

2020-01-01

Nanoscale Horizons

Abstract:Energy transfer in heterostructures is an essential interface interaction for extraordinary energy conversion properties, which promote promising applications in light-emitting and photovoltaic devices. However, when atomic-layered transition metal dichalcogenides (TMDCs) act as the energy acceptor because of strong Coulomb interactions, the transferred energy can be consumed by nonradiative exciton annihilations, which hampers the development of light-emitting devices. Hence, revealing the mechanism of energy transfer and the related relaxation processes from the aspect of the acceptor in the heterostructure is key to reducing nonradiative loss and optimizing luminescence. Here, we study the exciton dynamics from the standpoint of the acceptor in MoS2/CdSe quantum rod (QR) heterostructures and realize efficiently enhanced photoluminescence (PL). Through femtosecond pump-probe measurements, it is directly observed that energy transfer from CdSe QRs largely raises the exciton population of the acceptor, MoS2, providing a larger emission "source". In addition, the dielectric environment introduced by CdSe QRs efficiently enhances the PL by suppressing exciton-exciton annihilation (EEA). This study provides new insights for on-chip applications such as light-emitting diodes and optical conversion devices based on low dimensional semiconductor heterostructures.
Temperature Dependent Raman and Photoluminescence of Vertical WS2/MoS2 Monolayer Heterostructures

Zhijian Hu,Yanjun Bao,Ziwei Li,Yongji Gong,Rui Feng,Yingdong Xiao,Xiaochun Wu,Zhaohui Zhang,Xing Zhu,Pulickel M. Ajayan,Zheyu Fang

DOI: https://doi.org/10.1016/j.scib.2016.11.002

IF: 18.9

2017-01-01

Science Bulletin

Abstract:Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E12g and A1g modes of WS2 and MoS2 vary linearly with temperature increasing from 300 to 642K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.
Low-temperature photocarrier dynamics in monolayer MoS2

T. Korn,S. Heydrich,M. Hirmer,J. Schmutzler,C. Schüller

DOI: https://doi.org/10.1063/1.3636402

2011-06-17

Abstract:The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.

Materials Science
Thermal light emission from monolayer MoS2

Lukas Dobusch,Simone Schuler,Vasili Perebeinos,Thomas Mueller

DOI: https://doi.org/10.1002/adma.201701304

2019-03-07

Abstract:Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic devices. In recent years, several concepts for light emission from two-dimensional (2D) materials have been demonstrated. Most of these concepts are based on the recombination of electrons and holes in a pn-junction, either along the lateral direction using split-gate geometries in combination with monolayer TMDs, or by precisely stacking different 2D semiconductors on top of each other, in order to fabricate vertical van der Waals heterostructures, working as light-emitting diodes (LEDs). Further, EL was also observed along the channel of ionic liquid gated field-effect transistors (FETs) under ambipolar carrier injection. Another mechanism, which has been studied extensively in carbon nanotubes (CNTs) and more recently also in graphene, is thermal light emission as a result of Joule heating. Although the resulting efficiencies are smaller than that of LEDs based on ambipolar electron-hole injection, these experiments provide valuable insights into microscopic processes, such as electron-phonon and phonon-phonon interactions, and the behavior of low-dimensional materials under strong bias in general.

Mesoscale and Nanoscale Physics
Efficient Optical Modulation of Exciton State Population in Monolayer MoS2 at Room Temperature

Zeqian Ren,Qiwei Zhang,Xiu Li,Lixia Guo,Jizhou Wu,Yuqing Li,Wenliang Liu,Peng Li,Yongming Fu,Jie Ma

DOI: https://doi.org/10.3390/nano12183133

IF: 5.3

2022-09-09

Nanomaterials

Abstract:The modulation of exciton energy and state density of layer-structured transition metal dichalcogenides (TMDs) is required for diverse optoelectronic device applications. Here, the spontaneous inversion of exciton state population in monolayer MoS2 is observed by turning the pump light power. The excitons prefer to exist in low energy state under low pump power, but reverse under high pump power. To discuss the mechanism in depth, we propose a semiclassical model by combining the rate equation and photo−exciton interaction. Considering the modifying of exciton−exciton annihilation, the spontaneous inversion of exciton state population is phenomenologically described.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Metal–organic framework-based hybrids with photon upconversion

Xiaokai Chen,Xiaodong Zhang,Yanli Zhao

DOI: https://doi.org/10.1039/d4cs00571f

IF: 46.2

2024-11-18

Chemical Society Reviews

Abstract:Upconversion materials (UCMs) featuring an anti-Stokes type emission establish them as an important category of photoluminescent materials. Metal–organic frameworks (MOFs) are rapidly gaining prominence as a class of versatile materials with favourable physical and chemical properties, including high porosity, controllable pore size, flexible design, and diverse functional sites. To endow MOFs with upconversion capability and improve the properties and performance of UCMs, the hybrids integrating UCMs and MOFs are proven to be successful. This review focuses on the research advancements of upconverting MOF-based hybrids, encompassing classifications, luminescence mechanisms, designs, properties, and applications in energy, catalysis, and biomedical fields. The analyses on the functions of upconversion and MOFs, as well as the advantages and disadvantages of various upconverting MOF-based hybrids, are included. Future research directions spanning from properties and performance to applications are explored. This review will be valuable in highlighting the research accomplishments, inspiring more ideas, facilitating deeper investigations in diverse avenues, and further advancing the research field.

chemistry, multidisciplinary

Phonon-assisted upconversion photoluminescence of monolayer MoS_2 at elevated temperatures

High-temperature phonon-assisted upconversion photoluminescence of monolayer WSe2

Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Phonon-assisted Upconversion Photoluminescence in Monolayer MoSe2 and WSe2

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Organic Polymorphs with Fluorescence Switching: Direct Evidence for Mechanical and Thermal Modulation of Excited State Transitions.

Simultaneous Enhancement and Modulation of Upconversion by Thermal Stimulation in Sc2Mo3O12 Crystals.

Extending the Spectral Responsivity of MoS2 Phototransistors by Incorporating Up‐Conversion Microcrystals

High-enhancement photoluminescence of monolayer MoS_2 in hybrid plasmonic systems

Emerging photoluminescence in monolayer MoS2.

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2

Emerging Photoluminescence in Monolayer MoS 2

Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

Photoluminescence Enhancement of MoS2/CdSe Quantum Rod Heterostructures Induced by Energy Transfer and Exciton-Exciton Annihilation Suppression.

Temperature Dependent Raman and Photoluminescence of Vertical WS2/MoS2 Monolayer Heterostructures

Low-temperature photocarrier dynamics in monolayer MoS2

Thermal light emission from monolayer MoS2

Efficient Optical Modulation of Exciton State Population in Monolayer MoS2 at Room Temperature

Metal–organic framework-based hybrids with photon upconversion