Raman Scattering Methods for Monitoring the Electric Properties of the Postannealed Bulk Heterojunction
Daxin Zhang,Shuo Yang,Wenshi Zhao,Lili Yang,Yang Liu,Maobin Wei,Lei Chen,Jinghai Yang
DOI: https://doi.org/10.1021/acsaem.1c01600
IF: 6.4
2021-08-11
ACS Applied Energy Materials
Abstract:In the case of bulk heterojunctions (BHJs) of regioregular poly(3-hexylthiophene) (P3HT) and the soluble fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), electrical properties have been studied based on the Raman spectroscopy. Significantly, a well enough noteworthy phenomenon is the ″return-back″ shift of the Raman signal at the ∼1450 cm–1 with increasing annealing temperature, which was first observed using the normal Raman spectroscopy of the BHJ system. Based on the Herzberg–Teller coupling term in the organic–organic system, the ″return-back″ shift may be due to the charge transfer (CT), resulting in the significant change of resistivity (ρ). More importantly, the low annealing temperature-dependent frequency shift (ν) is carefully investigated with ρ, and ρ ∝ (−ν)2. In addition, the connection between Raman intensity and ρ is also established. This study is unprecedented to establish a clear connection between frequency shift and electrical properties, indicating that the Raman technique opens an avenue to analyze the electrical properties and characterize the performance of the battery.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaem.1c01600.Experimental section; SEM of P3HT, PCBM, P3HT:PCBM (weight to weight = 1) at different annealing temperatures; XRD of pure P3HT (powder), pure PCBM (powder), and the thin film of P3HT:PCBM (weight to weight = 1) at an annealing temperature of 100 °C; calculation of Eg of the ZnO and P3HT:PCBM films with no annealing and different annealing temperatures; the Raman intensity (I) and shift (v) of the BHJ at different annealing temperatures; the differential thermal analysis diagram of P3HT (power), PCBM (power), and P3HT:PCBM (power); analysis of the relation of Hall element and annealing temperature; and normalized Raman spectra of the thin film of P3HT (2.5 mg/mL) and PCBM (2.5 mg/mL) at different annealing temperatures (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,energy & fuels