Role of interface engineering in amorphous InGaZnO ETL for non-fullerene organic solar cells

Kalyani D. Kadam,Honggyun Kim,Muhammad Farooq Khan,Harshada Patil,Shania Rehman,Muneeb Ahmad,Jamal Aziz,Naila Nasir,Kyu Young Kim,Deok-kee Kim
DOI: https://doi.org/10.1016/j.surfin.2023.103626
IF: 6.2
2024-01-01
Surfaces and Interfaces
Abstract:Amorphous metal-oxide semiconductors have been developed as prospective substitutes for organic and silicon compounds, and their applications have been expanded due to their superior mobility in amorphous phase. As a result, this study demonstrated a facile approach to amend the interface quality by oxygen vacancy engineering. Here, we compared the performance of optimized oxygen-deficient (Od) and oxygen-rich (Or) amorphous indium–gallium–zinc oxide (a-IGZO) electron transport layers (ETL) for non-fullerene organic solar cells (OSCs). The ETL was fabricated using rf magnetron sputtering by changing oxygen contents. The power conversion efficiency (PCE) of Or device is 5.1 %, which was boosted to 6.6 % for Od device. The device with Od a-IGZO ETL outperforms the Or device, as the oxygen vacancies in Od device aid as electron donors, which deliver free electron carriers to IGZO film. These free electron carriers promote electron concentration, device mobility and deteriorate the resistivity, which facilitate charge transport and collection towards the electrode. Furthermore, devices improved their stability, as device with Od a-IGZO ETL retained almost 80 % of its initial PCE in ambient conditions. Consequently, interfacial engineering has played a crucial role in bringing OSC towards commercialization as it has substantial influence on charge collection and transport properties in devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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