Abstract:ZnON‐based synaptic transistors are first achieved in this study. The ratio of cross‐linking agent (PMF) is varied to control the internal –OH groups. The devices exhibit the best neuromorphic characteristics with a mobility of 93.4 cm2 V−1 s−1 and a PPF index of 291%. A detailed discussion of ion relaxation and dipole movement reveals the improvement in memory performance. The development of high‐mobility neuromorphic transistors is essential to increase signal transmission speed and solve the von Neumann bottleneck issue. Herein, this work proposes cross‐linked Poly(4‐vinylphenol) (c‐PVP) as a dielectric layer to form an electric double layer (EDL), which plays a key role in synaptic transistors, and measure the ratio‐dependent characteristics of cross‐linking agents in c‐PVP. When the ratio of PVP to poly(melamine‐co‐formaldehyde) methylated (PMF) is 10:1, neuromorphic transistors is found to show the best performance with a memory window of 2.2 V and a mobility of 93.4 cm2 V−1 s−1. Fourier‐transform infrared spectroscopy (FT‐IR) results show that the reduction in the concentration of the cross‐linking agent generates more hydroxyl groups within the c‐PVP film. The 10:1 c‐PVP‐based synaptic device has an ultra‐low energy consumption of 15.8 pJ for a single pulse and a maximum paired pulse facilitation (PPF) index value of 291%. Additionally, synaptic characteristics, such as pulse duration time dependent plasticity, pulse intensity dependent plasticity, pulse rate dependent plasticity (SRDP), high band filtering, and short‐term memory (STM) conversion to long‐term memory (LTM), are also described and discussed. These results suggest that c‐PVP/ZnON‐based neuromorphic devices can be promising artificial synapses for memory and learning capabilities.

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