Abstract:The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 um CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10^13 n_eq/cm^2 was observed to yield a SNR ranging between 11 and 23 for coolant temperatures varying from 15 C to 30 C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation respectively. These satisfactory results allow to validate the TowerJazz 0.18 um CMOS process for the ALICE ITS upgrade.

The ALPIDE pixel sensor chip for the upgrade of the ALICE Inner Tracking System

A Prototype Readout System for the ALPIDE Pixel Sensor

Upgrade of the ALICE Inner Tracking System

The upgrade of the ALICE Inner Tracking System

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

Upgrade of the Inner Tracking System of ALICE

Explorer-0: A Monolithic Pixel Sensor in a 180 nm CMOS process with an 18 µm thick high resistivity epitaxial layer

First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process

Commissioning of the new ALICE Inner Tracking System

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

Applications of CMOS technology at the ALICE experiment

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Digital Pixel Test Structures implemented in a 65 nm CMOS process

Performance of the ALICE Upgraded Inner Tracking System

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip

Evaluation of Planar Silicon Pixel Sensors with the RD53A Readout Chip for the Phase-2 Upgrade of the CMS Inner Tracker

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Silicon Avalanche Pixel Sensor for High Precision Tracking