Negative anomalous Nernst coefficient in a film and its enhancement in a - film

Keita Ito,Takahide Kubota,Koki Takanashi
DOI: https://doi.org/10.1103/physrevapplied.21.054012
IF: 4.6
2024-05-07
Physical Review Applied
Abstract:Topological ferromagnets with remarkable transverse-transport properties, low saturation magnetization ( Ms ), and high uniaxial magnetic anisotropy energy ( Ku ) are attracting attention for application in spintronic devices. In this study, the anomalous Nernst effect (ANE) in MnAlGe and (Mn - Cr)AlGe films with a pseudo-two-dimensional structure consisting of Mn ( Mn - Cr ) and Al - Ge layers were investigated. The MnAlGe and (Mn - Cr)AlGe films with low Ms and high Ku were grown epitaxially on single-crystal MgO(001 ) substrates using sputtering. The relatively large anomalous Hall angles of approximately 0.02 were obtained in both films at 300 K, which is attributed to layered topological nodal lines in these materials. Anomalous Nernst coefficients ( SANE ) were −0.13 μV/K for the MnAlGe film and −0.50 μV/K for the (Mn - Cr)AlGe film at 300 K. The enhancement of the negative SANE by substituting some Mn with Cr is caused by the enhancement of the positive Seebeck coefficient and the sign change of the transverse thermoelectric conductivity from positive to negative. These materials with low Ms , high Ku , and negative SANE are suitable for application in thermoelectric conversion devices using an ANE-based thermopile structure. https://doi.org/10.1103/PhysRevApplied.21.054012 © 2024 American Physical Society
physics, applied
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