Abstract:Fabrication of a broadband photodetector (PD) using a heavily n‐doped Si (n+‐S) with two asymmetric work‐function electrodes in lateral electrical contact. One of these two electrodes works as Ohmic contact (LiF(≈4.5 nm)/Al (≈80 nm)) whereas the other one works as Schottky contact (MoOx (≈4.5 nm)/Ag(≈80 nm)), resulting in a rectifying behavior of the device, showing detectivity of ≈9 × 1012 Jones at 700 nm. A high‐performance broadband photodetector (PD) has been fabricated by using a heavily doped n‐type silicon substrate (n+‐Si) in a lateral photodiode geometry. This self‐biased photodiode fabrication required only two asymmetric work‐function electrodes deposited on top of a clean n+‐Si substrate. Specifically, LiF/Al and MoOx /Ag are used as electrodes where LiF and MoO3 work as n+‐Si/electrode interface layers for Al and Ag electrodes respectively. These two electrodes have a work function difference of ≈1.1 eV which is measured by ultraviolet photoelectron spectroscopy study. Under dark, this lateral contact device shows a rectifying behavior with reverse‐to‐forward current ratio of ≈5.3 × 103 under ±1 V external bias. Moreover, this device shows a very high photoresponse with a dark‐to‐light current ratio (IL/ID) of 2.15 × 104 under white light illumination (600 W m−2) at −1 V operating voltage. Besides, the device shows external quantum efficiency (EQE) of ≈16.1% under self‐biasing (Vext = 0 V) conditions which reaches to 30.2% at −1 V external bias, whereas the device has responsivity (Rλ) and detectivity (D) of 10.2 A W−1 and 9.1 × 1012 Jones, respectively under self‐biasing condition. The peak responsivity (Rλ) and detectivity (D) of these devices reaches to 17.5 A W−1 and 1.6 × 1013 Jones under −1 V external bias.

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