Abstract:The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K′ valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 via applying uniaxial strain to break C 3v symmetry. As a result, although the Berry curvature itself is still opposite in K and K′ valleys, the two valleys would contribute equally to nonzero Berry curvature dipole. Upon applying electric field E , the emergent Berry curvature dipole D would lead to an out-of-plane orbital magnetization M ∝ D ⋅ E , which further induces an anomalous Hall effect with a linear response to E 2, known as nonlinear Hall effect. We show the strain modulated transport properties of nonlinear Hall effect in monolayer WSe2 with moderate hole-doping by gating. The second-harmonic Hall signals show quadratic dependence on electric field, and the corresponding orbital magnetization per current density M/J can reach as large as 60. In contrast to the conventional Rashba–Edelstein effect with in-plane spin polarization, such current-induced orbital magnetization is along the out-of-plane direction, thus promising for high-efficient electrical switching of perpendicular magnetization.

Nonlinear Hall effect in isotropic k‐cubed Rashba model: Berry‐curvature‐dipole engineering by in‐plane magnetic field

Nonlinear Hall effect in isotropic k-cubed Rashba model: Berry-curvature-dipole engineering by in-plane magnetic field

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Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe 2 Monolayer