Ultra-broadband emission up to 181 nm of VO 4 -activated yellow phosphor for white light-emitting diodes with high color rendering index

Yan Xiang,Hancheng Zhu,Pengpeng Dai,Meng Zhang

DOI: https://doi.org/10.1016/j.jlumin.2023.120397

IF: 3.6

2023-12-24

Journal of Luminescence

Abstract:Exploring broadband yellow phosphors capable of covering the cyan to red region is an effective approach to achieve high-performance phosphor-converted white light-emitting diodes (pc-WLEDs). Herein, we synthesized a series of VO 4 -activated ultra-broadband KSrP 1−x V x O 4 (0.1 ≤ x ≤ 1) yellow phosphors via high temperature solid-state reaction. Successive substitution of P 5+ with V 5+ causes a slight expansion of the lattice constant and induces several highly localized energy-levels within the forbidden band. Density functional theory calculations confirm that these newly appeared sharp-line energy-levels are attributed to the constructed VO 4 anionic groups. With the optimized V 5+ content, the KSrP 0.7 V 0.3 O 4 phosphor exhibits an ultra-broadband yellow emission centered at 537 nm under 355 nm excitation. Impressively, its full width at half maximum is up to 181 nm, exceeding that of most reported counterparts. At 105 °C, the KSrP 0.7 V 0.3 O 4 sample experiences an emission loss of 53%. A WLED device is fabricated by using phosphor blend of KSrP 0.7 V 0.3 O 4 yellow phosphor and the commercial BaMgAl 10 O 17 : Eu 2+ blue phosphor and a 355 nm NUV LED chip, demonstrating bright white emission with high color rendering index (CRI) of 90 and suitable correlated color temperature of 5953 K. These findings indicate that this phosphor has great potential for achieving high CRI WLEDs.

optics