Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst

Frederick Osei-Tutu Agyapong-Fordjour,Seok Joon Yun,Hyung-Jin Kim,Wooseon Choi,Soo Ho Choi,Laud Anim Adofo,Stephen Boandoh,Yong In Kim,Soo Min Kim,Young-Min Kim,Young Hee Lee,Young-Kyu Han,Ki Kang Kim
DOI: https://doi.org/10.48550/arXiv.2010.10908
2020-10-21
Materials Science
Abstract:Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution.
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