Abstract:Quantised lattice vibrations (i.e., phonons) in solids are robust and unambiguous fingerprints of crystal structures and of their symmetry properties. In metals and semimetals, strong electron-phonon coupling may lead to so-called Kohn anomalies in the phonon dispersion, providing an image of the Fermi surface in a non-electronic observable. Kohn anomalies become prominent in low-dimensional systems, in particular in graphene, where they appear as sharp kinks in the in-plane optical phonon branches. However, in spite of intense research efforts on electron-phonon coupling in graphene and related van der Waals heterostructures, little is known regarding the links between the symmetry properties of optical phonons at and near Kohn anomalies and their sensitivity towards the local environment. Here, using inelastic light scattering (Raman) spectroscopy, we investigate a set of custom-designed graphene-based van der Waals heterostructures, wherein dielectric screening is finely controlled at the atomic layer level. We demonstrate experimentally and explain theoretically that, depending exclusively on their symmetry properties, the two main Raman modes of graphene react differently to the surrounding environment. While the Raman-active near-zone-edge optical phonons in graphene undergo changes in their frequencies due to the neighboring dielectric environment, the in-plane, zone-centre optical phonons are symmetry-protected from the influence of the latter. These results shed new light on the unique electron-phonon coupling properties in graphene and related systems and provide invaluable guidelines to characterise dielectric screening in van der Waals heterostructures and moiré superlattices.

Screening effects in the electron-optical phonon interaction

Overscreening-free electron-phonon interaction in realistic materials

Phonon-mediated renormalization of exciton energies and absorption spectra in polar semiconductors

Effect of photoinduced screening on the spectroscopic signature of exciton-phonon coupling

Phonon screening and dissociation of excitons at finite temperatures from first principles

Equilibrium and out-of-equilibrium over-screening free phonon self-energy in realistic materials

Phonon Screening of Excitons in Semiconductors: Halide Perovskites and Beyond

Screening Induced Crossover between Phonon- and Plasmon-Mediated Pairing in Layered Superconductors

Screening ineffectiveness and THz emission at bare LO phonon frequencies

Phonon Self-Energy Corrections: To Screen, or Not to Screen

Phonon screening of excitons in atomically thin semiconductors

Effect of dynamical screening in the Bethe-Salpeter framework: Excitons in crystalline naphthalene

Screening And Plasmons In Pure And Disordered Single- And Bilayer Black Phosphorus

Dynamical screening effects of substrate phonons on two-dimensional excitons

Effects of dynamical dielectric screening on the excitonic spectrum of monolayer semiconductors

Effect of quantum charge screening on dual plasmon scattering

Screening of Polar Electron-Phonon Interactions near the Surface of the Rashba Semiconductor BiTeCl

Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors

Polaron-induced band renormalization due to linear and quadratic electron-phonon coupling

Screening of electron-phonon coupling in graphene on Ir(111)

Symmetry-dependent dielectric screening of optical phonons in monolayer graphene