Abstract:Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical properties, making them promising nano-materials for the next-generation electronic systems. A large number of heterostructures have been fabricated by stacking of various 2D materials to achieve different functionalities. In this work, we simulate the electron transport properties of a three-terminal multilayer heterostructure made from graphene nanoribbons vertically sandwiching a boron nitride tunneling barrier. To investigate the effects of the unavoidable misalignment in experiments, we introduce a tunable angular misorientation between 2D layers to the modeled system. Current-Voltage (I-V) characteristics of the device exhibit multiple NDR peaks originating from distinct mechanisms. A unique NDR mechanism arising from the lattice mismatch is captured and it depends on both the twisting angle and voltage bias. Analytical expressions for the positions of the resonant peaks observed in I-V characteristic are developed. To capture the slight degradation of PVR ratios observed in experiments when temperature increases from 2K to 300K, electron-photon scattering decoherence has been added to the simulation, indicating a good agreement with experiment works as well as a robust preservation of resonant tunneling feature.

Negative Differential Resistance in the Scanning Tunneling Spectroscopy of Organic molecules

Negative differential resistance of Styrene on an ideal Si[111] surface: dependence of the I-V characteristics on geometry, surface doping and shape of the STM-tip

Negative Differential Resistance Behavior of Thiolated Borazine Bonding with Gold Electrodes

Negative Differential-Resistance Device Involving Two C-60 Molecules

Large Negative Differential Resistance in a Molecular Junction of Carbon Nanotube and Anthracene

Mechanism for Negative Differential Resistance in Molecular Electronic Devices: Local Orbital Symmetry Matching.

Large negative differential conductance and its transformation in a single radical molecule

Negative Differential Resistance in Parallel Single-Walled Carbon Nanotube Contacts

Negative Differential Resistance Behaviors in Porphyrin Molecular Junctions Modulated with Side Groups

Atomic‐Scale Characterization of Negative Differential Resistance in Ferroelectric Bi 2 WO 6

Negative Differential Resistance in a Hybrid Silicon-Molecular System: Resonance Between the Intrinsic Surface-States and the Molecular Orbital.

Scanning Tunneling Microscope Investigation of the Currentvoltage Characteristics of a Newly Engineered Π-electron Molecule

Probing Negative Differential Resistance on Si(111)-3×3-Ag Surface with Scanning Tunneling Microscopy

Negative Differential Resistance Behavior of Silicon Monatomic Chain Encapsulated in Carbon Nanotubes

Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Molecular Design of Negative Differential Resistance Device through Intermolecular Interaction

Feedback loop dependent charge density wave imaging by scanning tunneling spectroscopy

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors