Abstract:Structurally disordered materials pose fundamental questions1–4, including how different disordered phases ('polyamorphs') can coexist and transform from one phase to another5–9. Amorphous silicon has been extensively studied; it forms a fourfold-coordinated, covalent network at ambient conditions and much-higher-coordinated, metallic phases under pressure10–12. However, a detailed mechanistic understanding of the structural transitions in disordered silicon has been lacking, owing to the intrinsic limitations of even the most advanced experimental and computational techniques, for example, in terms of the system sizes accessible via simulation. Here we show how atomistic machine learning models trained on accurate quantum mechanical computations can help to describe liquid–amorphous and amorphous–amorphous transitions for a system of 100,000 atoms (ten-nanometre length scale), predicting structure, stability and electronic properties. Our simulations reveal a three-step transformation sequence for amorphous silicon under increasing external pressure. First, polyamorphic low- and high-density amorphous regions are found to coexist, rather than appearing sequentially. Then, we observe a structural collapse into a distinct very-high-density amorphous (VHDA) phase. Finally, our simulations indicate the transient nature of this VHDA phase: it rapidly nucleates crystallites, ultimately leading to the formation of a polycrystalline structure, consistent with experiments13–15 but not seen in earlier simulations11,16–18. A machine learning model for the electronic density of states confirms the onset of metallicity during VHDA formation and the subsequent crystallization. These results shed light on the liquid and amorphous states of silicon, and, in a wider context, they exemplify a machine learning-driven approach to predictive materials modelling. Machine learning models enable atomistic simulations of phase transitions in amorphous silicon, predict electronic fingerprints, and show that the pressure-induced crystallization occurs over three distinct stages.

Quantum atomic delocalization vs. structural disorder in amorphous silicon

Quantum nuclear motion in silicene: Assessing structural and vibrational properties through path-integral simulations

Quantum statistical effects in the mass transport of interstitial solutes in a crystalline solid

Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of $a$-Si

Structural tunability and origin of two-level systems in amorphous silicon

Structural dynamics of a model of amorphous silicon

Origins of structural and electronic transitions in disordered silicon

Structural Amorphization-Induced Topological Order

Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells

Effect of quantization of vibrations on the structural properties of crystals

Electronic Transport in Metal Nanocrystal Arrays: The Effect of Structural Disorder on Scaling Behavior

Local-fields and disorder effects in free-standing and embedded Si nanocrystallites

Quantum Interference of Coulomb Interaction and Disorder: Phase Shift of Friedel Oscillations and an Instability of the Fermi Sea

Topological diffusive metal in amorphous transition metal monosilicides

Influence of nuclear quantum effects on the electronic properties of amorphous carbon

Nuclear quantum effects in structural and elastic properties of cubic silicon carbide

Low-energy quantum dynamics of atoms at defects. Interstitial oxygen in silicon

Disorder effects on quantum transport and quantum phase transition in low-dimensional superconducting and topological systems

Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures

Silicon Nanocrystallites in SiO2 Matrix: The Role of Disorder and Size