Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

J.G.S. Lok,A.K. Geim,B. Tieke,J.C. Maan,S.T. Stoddart,R.J. Hyndman,B.L. Gallagher,M. Henini
DOI: https://doi.org/10.48550/arXiv.cond-mat/9804256
1998-04-24
Abstract:We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the abnormal behaviors that occur in the double - layer two - dimensional hole gas (2DHG) system when the total filling factor is 2, including the hysteresis in the longitudinal resistance and Hall resistance and the weak temperature dependence of the resistance minimum. These abnormal behaviors disappear after a thin metal film is placed, and the system returns to the normal quantum Hall effect behavior. ### Research Background and Problems 1. **Research on Double - layer Two - dimensional Systems** - Double - layer spin - polarized two - dimensional systems have received extensive attention in recent years due to their expected extraordinary magnetic properties. - These properties originate from the inter - layer Coulomb interaction and exchange interaction. Depending on the subtle ways of these interactions, Zeeman energy, and the splitting between sub - bands, ferromagnetic or antiferromagnetic orderings are predicted to occur when the filling factor is 2. 2. **Experimentally Observed Phenomena** - In the double - layer two - dimensional hole gas grown in the <311> direction, the transport properties of the Hall bar in the <233> direction were studied. - It was observed that near the filling factor of 2, obvious hysteresis occurred in the longitudinal resistance \(R_{xx}\) and Hall resistance \(R_{xy}\). - As the magnetic field scanning direction changes, the change trends of \(R_{xx}\) and \(R_{xy}\) are different, and this hysteresis is particularly significant at low temperatures. 3. **Characteristics of Hysteresis** - The hysteresis occurs at low temperatures (T < 0.6 K) and is observed in both AC and DC measurements. - Symmetry of hysteresis loops: symmetric for \(R_{xx}\) and antisymmetric for \(R_{xy}\). - The hysteresis is accompanied by incompletely quantized Hall resistance and non - zero longitudinal resistance, which is unexpected in high - mobility 2DHG. 4. **Influencing Factors** - When a thin metal film (gate) is placed on top of the 2DHG, the hysteresis completely disappears and the quantization becomes precise. - Temperature - dependence studies show that there is no hysteresis at higher temperatures, while the hysteresis gradually appears below about 0.6 K. 5. **Theoretical Explanation** - Theoretical predictions suggest that strongly - coupled double - layer quantum Hall systems will undergo a transition to a (anti -) ferromagnetic ground state at ν = 2. - Away from this filling factor, the ground state is destroyed, causing the system to be divided into two macroscopic phases: one favorable phase with ν = 2 and another phase far from this filling factor. - This separation leads to the formation of macroscopic spin - charge domains, thus explaining the observed hysteresis and non - zero longitudinal resistance. ### Conclusion This paper provides evidence of the formation of macroscopic domains in strongly - coupled double - layer two - dimensional hole gases when the total filling factor is 2 through experiments. The obvious hysteresis in the observed longitudinal resistance and Hall resistance is a non - equilibrium state but has an extremely long lifetime at low temperatures. A phenomenological model successfully explains the formation of these domains and the observed hysteresis. ### Formula Summary - Filling factor: \(\nu=\frac{n}{n_0}\), where \(n\) is the carrier density and \(n_0\) is the reference density. - Relationship between magnetic field and filling factor: \(\nu = \frac{h n}{e B}\), where \(h\) is Planck's constant, \(e\) is the electron charge, and \(B\) is the magnetic field strength. Through these studies, the authors have revealed the complex magnetic and transport behaviors in the double - layer two - dimensional hole gas system and provided a new perspective for understanding the physical mechanisms of strongly - coupled quantum Hall systems.