Distinct moiré trions in a twisted semiconductor homobilayer
Zhida Liu,Haonan Wang,Xiaohui Liu,Yue Ni,Frank Gao,Saba Arash,Dong Seob Kim,Xiangcheng Liu,Yongxin Zeng,Jiamin Quan,Di Huang,Kenji Watanabe,Takashi Taniguchi,Edoardo Baldini,Allan H. MacDonald,Chih-Kang Shih,Li Yang,Xiaoqin Li
2024-07-24
Abstract:Many fascinating properties discovered in graphene and transition metal dichalcogenide (TMD) moiré superlattices originate from flat bands and enhanced many-body effects. Here, we discover new many-electron excited states in TMD homobilayers. As optical resonances evolve with twist angle and doping in MoSe$_2$ bilayers, a unique type of ``charge-transfer" trions is observed when gradual changes in atomic alignment between the layers occur. In real space, the optically excited electron-hole pair mostly resides in a different site from the doped hole in a moiré supercell. In momentum space, the electron-hole pair forms in the single-particle-band $K$-valley, while the hole occupies the $\Gamma$-valley. The rich internal structure of this trion resonance arises from the ultra-flatness of the first valence band and the distinct influence of moiré potential modulation on holes and excitons. Our findings open new routes to realizing photon-spin transduction or implementing moiré quantum simulators with independently tunable fermion and boson densities.
Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons