Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor
Fan Wu,Ignacio Gutiérrez‐Lezama,Sara A. López‐Paz,Marco Gibertini,Kenji Watanabe,Takashi Taniguchi,Fabian O. von Rohr,Nicolas Ubrig,Alberto F. Morpurgo
DOI: https://doi.org/10.1002/adma.202109759
IF: 29.4
2022-03-10
Advanced Materials
Abstract:Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions is found. In particular, a qualitatively different dependence of the conductivities σ<sub>a</sub> and σ<sub>b</sub> on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σ<sub>b</sub> /σ<sub>a</sub> ≈ 3 × 10<sup>2</sup> to 10<sup>5</sup> at low temperature and negative gate voltage) are observed, together with a different behavior of the longitudinal magnetoresistance in the two directions and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology-and unambiguous signatures of a 1D van Hove singularity detected in energy-resolved photocurrent measurements-indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. It is concluded that CrSBr is the first 2D semiconductor to show distinctly quasi-1D electronic transport properties.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology