The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

Eckhard Pehlke,Nikolaj Moll,Matthias Scheffler
DOI: https://doi.org/10.48550/arXiv.mtrl-th/9607012
1996-07-19
Abstract:The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied for the elastic relaxation energies.
Materials Science
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