Nitrogen–oxygen vacancy and S-scheme heterostructure synergistically enhance solar photocatalysis
Guyu Zhang,Yumin Yan,Mingxia Tian,Dong He,Beibei Sun,Mingliang Wu,Yanan Li,Jianhui Jiang
DOI: https://doi.org/10.1016/j.jre.2024.09.032
IF: 4.632
2024-10-03
Journal of Rare Earths
Abstract:Highlights • Successful preparation of Ce-ZnO@C-g-C 3 N 4 S-scheme heterojunction composites was achieved. • Compared to ZnO and g-C 3 N 4 , the composites' rates of degradation for MB were 34.8 and 22.7 times higher, correspondingly. Introducing vacancies and constructing S-scheme heterojunctions are promising approaches for enhancing photocatalytic activity. However, the application of this synergistic strategy to realize inexpensive and efficient photocatalysts remains challenging. In this study, a straightforward hydrothermal and calcination modification strategy was used to prepare a photocatalyst in which abundant nitrogen–oxygen vacancies were coupled with a Ce-ZnO@C-g-C 3 N 4 composite with an S-scheme heterojunction. Under sunlight irradiation, the prepared composite achieves 98.3% and 86.4% degradation of methylene blue and ciprofloxacin, with degradation rate constants of 0.3464 and 0.0893 min −1 , respectively. Compared with ZnO and g-C 3 N 4 , the degradation rates of methylene blue over the composite catalyst are 34.8 and 22.7 times higher, respectively, and those of ciprofloxacin are 2.4 and 4.9 times higher, respectively. Based on a detailed examination of the catalyst structure and photoelectric properties, the high photocatalytic efficiency is attributed to nitrogen–oxygen vacancies, an enhanced surface area, and synergistic S-scheme heterojunction effects. These factors broaden the spectral range, increase the number of active sites, and facilitate efficient charge transfer, thereby enhancing the photocatalytic reaction. This system demonstrates the feasibility of integrating doping and heterojunction formation to enhance photocatalytic performance synergistically. Graphical abstract Morphological modification of modified ZnO and g-C 3 N 4 by Ce and C doping, respectively, produces impurity energy levels, electron trapping centers generated by N and O vacancies, and S-scheme heterojunctions formed at the interface of the two materials, all of which promote deepening of the valence band positions, making them more conducive to pollutant degradation. Download: Download high-res image (201KB) Download: Download full-size image
chemistry, applied