Tunable Kondo effect in graphene with defects

Jian-Hao Chen,Liang Li,William G. Cullen,Ellen D. Williams,Michael S. Fuhrer

DOI: https://doi.org/10.1038/nphys1962

IF: 19.684

2011-04-03

Nature Physics

Abstract:Although evidence indicates that defects induce magnetism in graphite, it’s unclear whether this extends to graphene. An observation of the gate-tunable Kondo effect in ion-beam-damaged graphene suggests it does.

physics, multidisciplinary

What problem does this paper attempt to address?

Gate Tunable Kondo Effect in Magnetic Molecule Decorated Graphene

Baoming Yan,Xinqi Li,Jiaji Zhao,Zhenzhao Jia,Fangdong Tang,Zhihong Zhang,Dapeng Yu,Kaihui Liu,Liyuan Zhang,Xiaosong Wu

DOI: https://doi.org/10.1016/j.ssc.2018.05.001

IF: 1.934

2018-01-01

Solid State Communications

Abstract:The Kondo effect is one of the most widely studied many-body phenomena. Magnetic impurity decorated graphene is predicted to exhibit the Kondo effect with intriguing properties. Here we study the Kondo effect in Cobalt(II) phthalocyanine magnetic molecule decorated graphene by low temperature transport measurements. Spin-flip scattering and a logarithmic increase of resistance are observed, which confirms the Kondo effect. At a high carrier density, Kondo screening persists up to 20 K, suggesting a strong coupling between Dirac electrons and local magnetic moments of molecules. Decreasing the carrier concentration by a gate voltage results in a strong suppression of Kondo screening. Such tuning of Kondo screening can be used to turn on/off the local moment. Our results demonstrate a new Kondo system based on graphene. The significant gate tunability of the system may be used in spintronics.
Ferromagnetism-induced Kondo Effect in Graphene with a Magnetic Impurity

Gao-Yang Li,Tie-Feng Fang,Ai-Min Guo,Qing-Feng Sun

DOI: https://doi.org/10.1103/physrevb.100.115115

2019-01-01

Abstract:We investigate the many-body effects of a magnetic adatom in ferromagnetic graphene by using the numerical renormalization group method. The nontrivial band dispersion of ferromagnetic graphene gives rise to interesting Kondo physics different from that in conventional ferromagnetic materials. For a half-filled impurity in undoped graphene, the presence of ferromagnetism can bring forth Kondo correlations, yielding two kink structures in the local spectral function near the Fermi energy. When the spin splitting of local occupations is compensated by an external magnetic field, the two Kondo kinks merge into a full Kondo resonance characterizing the fully screened ground state. Strikingly, we find the resulting Kondo temperature monotonically increases with the spin polarization of Dirac electrons, which violates the common sense that ferromagnetic bands are usually detrimental to Kondo correlations. Doped ferromagnetic graphene can behave as half metals, where its density of states at the Fermi energy linearly vanishes for one spin direction but keeps finite for the opposite direction. In this regime, we demonstrate an abnormal Kondo resonance that occurs in the first spin direction, while completely absent in the other one.
Gate-tunable Kondo resistivity and dephasing rate in graphene studied by numerical renormalization group calculations

Po-Wei Lo,Guang-Yu Guo,Frithjof B. Anders

DOI: https://doi.org/10.1103/PhysRevB.89.195424

2014-02-01

Abstract:We investigate the resistivity and dephasing rate in the Kondo regime due to magnetic impurities in graphene with different chemial potentials ($\mu$). The Kondo effect due to either carbon vacancies or magnetic adatoms in graphene is described by the single-orbital pseudo-gap asymmetric Anderson impurity model. We find that although the Anderson impurity model considered here is a mixed valence system, it can be drived into either the Kondo [$\mu > \mu_c$ (critical value) $>0$] or mixed valency ($\mu \approx \mu_c$) or empty orbital ($\mu < \mu_c$) regime by a gate voltage, giving rise to characteristic features in resistivity and dephasing rate in each regime. Specifically, in the case of $\mu < \mu_c$, the shapes of the resistivity (dephasing rate) curves for different $\mu$ are nearly identical. However, as temperature decreases, they start to increase to their maxima at a lower $T/T_K$ but more rapidly [as $(T_K/T)^{3/2}$] than in normal metals [here $T$ ($T_K$) denotes the (Kondo) temperature]. As $T$ further decreases, after reaching the maximum, the dephasing rate drops more quickly than in normal metals, behaving as $(T/T_K)^3$ instead of $(T/T_K)^2$. Furthermore, the resistivity has a distinct peak above the saturation value near $T_K$. In the case of $\mu > \mu_c$, in contrast, the resistivity curve has an additional broad shoulder above 10$T_K$ and the dephasing rate exhibits an interesting shoulder-peak shape. In the narrow boundary region ($\mu \approx \mu_c$), both the resistivity and dephasing rate curves are similar to the corresponding ones in normal metals. This explains the conventional Kondo like resistivity from recent experiments on graphene with defects. The resistivity and dephasing rate are analysized in terms of the calculated $T$-dependent spectral function, correlation self-energy and renormalized impurity level.

Mesoscale and Nanoscale Physics
A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

E.E. Vdovin,M.T. Greenaway,Yu.N. Khanin,S.V. Morozov,O. Makarovsky,A. Patanè,A. Mishchenko,S. Slizovskiy,V.I. Fal'ko,A.K. Geim,K.S. Novoselov,L. Eaves

DOI: https://doi.org/10.1038/s42005-023-01277-y

2023-07-04

Abstract:Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.

Mesoscale and Nanoscale Physics
Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

Levente Máthé,Ioan Grosu

DOI: https://doi.org/10.3762/bjnano.11.17

IF: 3.1

2020-01-20

Beilstein Journal of Nanotechnology

Abstract:Background: Quantum dots connected to larger systems containing a continuum of states like charge reservoirs allow the theoretical study of many-body effects such as the Coulomb blockade and the Kondo effect. Results: Here, we analyze the nonequilibrium Kondo effect and transport phenomena in a quantum dot coupled to pure monolayer graphene electrodes under external magnetic fields for finite on-site Coulomb interaction. The system is described by the pseudogap Anderson Hamiltonian. We use the equation of motion technique to determine the retarded Green’s function of the quantum dot. An analytical formula for the Kondo temperature is derived for electron and hole doping of the graphene leads. The Kondo temperature vanishes in the vicinity of the particle–hole symmetry point and at the Dirac point. In the case of particle–hole asymmetry, the Kondo temperature has a finite value even at the Dirac point. The influence of the on-site Coulomb interaction and the magnetic field on the transport properties of the system shows a tendency similar to the previous results obtained for quantum dots connected to metallic electrodes. Most remarkably, we find that the Kondo resonance does not show up in the density of states and in the differential conductance for zero chemical potential due to the linear energy dispersion of graphene. An analytical method to calculate self-energies is also developed which can be useful in the study of graphene-based systems. Conclusion: Our graphene-based quantum dot system provides a platform for potential applications of nanoelectronics. Furthermore, we also propose an experimental setup for performing measurements in order to verify our model.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Scanning Tunneling Spectroscopy of a Magnetic Atom on Graphene in the Kondo Regime

Huai-Bin Zhuang,Qing-feng Sun,X. C. Xie

DOI: https://doi.org/10.1209/0295-5075/86/58004

2009-01-01

EPL (Europhysics Letters)

Abstract:The Kondo effect in the system consisting of a magnetic adatom on the graphene is studied. By using the non-equilibrium Green function method with the slave-boson mean field approximation, the local density of state (LDOS) and the conductance are calculated. For a doped graphene, the Kondo phase is present at all time. Surprisingly, two kinds of Kondo regimes are revealed. But for the undoped graphene, the Kondo phase only exists if the adatom's energy level is beyond a critical value. The conductance is similar to the LDOS, thus, the Kondo peak in the LDOS can be observed with the scanning tunneling spectroscopy. In addition, in the presence of a direct coupling between the STM tip and the graphene, the conductance may be dramatically enhanced, depending on the coupling site.
Control of the local magnetic states in graphene with voltage and gating

Fei Gao,Yu Zhang,Lin He,Shiwu Gao,Mads Brandbyge

DOI: https://doi.org/10.1103/physrevb.103.l241402

IF: 3.7

2021-06-01

Physical Review B

Abstract:Magnetism of graphene can be created by atomic defects, either hydrogen adsorption or single-carbon vacancy formation, owing to the unpaired π electrons around the defects. Here we explore, based on rigorous first principles calculations, the possibility of voltage manipulation of two such types of π magnetism in graphene via a scanning tunneling microscope tip. We find a remarkably different behavior. For the hydrogen, the magnetic moment can be switched on and off with voltage-induced doping, whereas, for the carbon vacancy, the spin splitting of the π bands persists, almost independent of the extent of doping, due to the coupling between the π and the σ bonds. Furthermore, the local atomic structures near the vacancy can be reversibly manipulated by a coordination mechanism between an intermediate tip-defect distance and a moderate tip voltage, consequently leading to the reversal of spin polarization of the π bands. Voltage control of the local magnetic states may open a new avenue for potential applications in spintronics.

physics, condensed matter, applied,materials science, multidisciplinary
Strain Controlled Ferromagnetic–ferrimagnetic Transition and Vacancy Formation Energy of Defective Graphene

Yajun Zhang,M. P. K. Sahoo,Jie Wang

DOI: https://doi.org/10.1088/0957-4484/27/43/435206

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Single vacancy (SV)-induced magnetism in graphene has attracted much attention motivated by its potential in achieving new functionalities. However, a much higher vacancy formation energy limits its direct application in electronic devices and the dependency of spin interaction on the strain is unclear. Here, through first-principles density-functional theory calculations, we investigate the possibility of strain engineering towards lowering vacancy formation energy and inducing new magnetic states in defective graphene. It is found that the SV-graphene undergoes a phase transition from an initial ferromagnetic state to a ferrimagnetic state under a biaxial tensile strain. At the same time, the biaxial tensile strain significantly lowers the vacancy formation energy. The charge density, density of states and band theory successfully identify the origin and underlying physics of the transition. The predicted magnetic phase transition is attributed to the strain driven spin flipping at the C-atoms nearest to the SV-site. The magnetic semiconducting graphene induced by defect and strain engineering suggests an effective way to modulate both spin and electronic degrees of freedom in future spintronic devices.
Tuning Magnetic Properties of Graphene Nanoribbons with Topological Line Defects: from Antiferromagnetic to Ferromagnetic

Min Kan,Jian Zhou,Qiang Sun,Qian Wang,Yoshiyuki Kawazoe,Puru Jena

DOI: https://doi.org/10.1103/physrevb.85.155450

IF: 3.7

2012-01-01

Physical Review B

Abstract:Zigzag-edged graphene nanoribbons are antiferromagnetic in cross-edge coupling and unsuitable for spintronics applications. Two new strategies of tuning antiferromagnetism (AFM) to ferromagnetism (FM) in graphene nanoribbons are introduced through topological line defects composed of pentagonal and octagonal rings, and their ability to induce magnetic transition is probed by using density functional theory. The resulting exchange energy is found to be large enough for ferromagnetism to be observed at room temperature. Both strategies are experimentally feasible, and the results suggest that defect engineering may provide a novel path to manipulate the magnetic properties of graphene nanoribbons.
Vacancy-Induced Tunable Kondo Effect in Twisted Bilayer Graphene

Yueqing Chang,Jinjing Yi,Ang-Kun Wu,Fabian B. Kugler,Eva Y. Andrei,David Vanderbilt,Gabriel Kotliar,and J. H. Pixley

DOI: https://doi.org/10.1103/physrevlett.133.126503

IF: 8.6

2024-09-20

Physical Review Letters

Abstract:In single sheets of graphene, vacancy-induced states have been shown to host an effective spin- 1/2 hole that can be Kondo screened at low temperatures. Here, we show how these vacancy-induced impurity states survive in twisted bilayer graphene (TBG), which thus provides a tunable system to probe the critical destruction of the Kondo effect in pseudogap hosts. Ab initio calculations and atomic-scale modeling are used to determine the nature of the vacancy states in the vicinity of the magic angle in TBG, demonstrating that the vacancy can be treated as a quantum impurity. Utilizing this insight, we construct an Anderson impurity model with a TBG host that we solve using the numerical renormalization group combined with the kernel polynomial method. We determine the phase diagram of the model and show how there is a strict dichotomy between vacancies in the AA/BB versus AB/BA tunneling regions. In AB/BA vacancies, the Kondo temperature at the magic angle develops a broad distribution with a tail to vanishing temperatures due to multifractal wave functions at the magic angle. We argue that scanning tunneling microscopy in the vicinity of the vacancy can act as a probe of both the critical single-particle states and the underlying many-body ground state in magic-angle TBG. https://doi.org/10.1103/PhysRevLett.133.126503 © 2024 American Physical Society

physics, multidisciplinary
Tunable Magnetism of Transition Metal Nanostructures by Hydrogenated Graphene

T. Tsevelmaa,Chunfeng,D. Odkhuu,N. Tsogbadrakh,S. C. Hong,S.C. Hong

DOI: https://doi.org/10.48550/arXiv.1810.05946

2018-10-14

Materials Science

Abstract:Controlling magnetism of transition metal atoms by pairing with $\pi$ electronic states of graphene is intriguing. Herein, through first - principle computation we explore the possibility of switching magnetization by forming the tetrahedral $sp^3$ - metallic $d$ hybrid bonds. Graphene multilayers capped by single - layer cobalt atoms can transform into the $sp^3$ - bonded diamond films upon the hydrogenation of the bottom surface. While the conversion is favored by hybridization between the $sp^3$ dangling bonds and metallic $d_{z^2}$ states, such a strong hybridization can lead to the reorientation of magnetization easy axis of cobalt adatoms in plane to perpendicular. The further investigations identify that this anisotropic magnetization even can be modulated upon the change in charge carrier density, suggesting the possibility of an electric - field control of magnetization reorientation. These results provide a novel alternative that would represent tailoring magnetism by means of degree of the interlayer hybrid bonds in the layered materials.
Topological Phases, Local Magnetic Moments, and Spin Polarization Triggered by C558-Line Defects in Graphene

Ning-Jing Yang,Wen-Ti Guo,Hai Yang,Zhigao Huang,Jian-Min Zhang

2023-08-15

Abstract:We study the electronic properties of a novel topological defect structure for graphene interspersed with C558-line defects along the Armchair boundary. This system has the topological property of being topologically three-periodic and the type-II Dirac-fermionic character of the embedded topological phase. At the same time, we show computationally that the topological properties of the system are overly dependent on the coupling of this line defect. Using strain engineering to regulate the magnitude of hopping at the defect, the position of the energy level can be easily changed to achieve a topological phase transition. We also discuss the local magnetic moment and the ferromagnetic ground state in the context of line defects, which is the conclusion after considering additional Coulomb interactions. This leads to spin polarization of the whole system. Finally, by modulating the local magnetic moment at the position of the line defect, we achieve a tunable spin quantum conductance in a one-dimensional nanoribbon. Near the Fermi energy level, it also has the property of complete spin polarization. Consequently, spin filtering can be achieved by varying the incident energy of the electrons.

Mesoscale and Nanoscale Physics
Tunable magnetic confinement effect in a magnetic superlattice of graphene

Onur Tosun,Preetha Sarkar,Chang Qian,Matthew Gilbert,Qian Chen,Nadya Mason

DOI: https://doi.org/10.1038/s41699-024-00468-7

IF: 10.516

2024-04-11

npj 2D Materials and Applications

Abstract:Two-dimensional van der Waals materials such as graphene present an opportunity for band structure engineering using custom superlattice potentials. In this study, we demonstrate how self-assemblies of magnetic iron-oxide (Fe 3 O 4 ) nanospheres stacked on monolayer graphene generate a proximity-induced magnetic superlattice in graphene and modify its band structure. Interactions between the nanospheres and the graphene layer generate superlattice Dirac points in addition to a gapped energy spectrum near the K and K′ valleys, resulting in magnetic confinement of quasiparticles around the nanospheres. This is evidenced by gate-dependent resistance oscillations, observed in our low temperature transport measurements, and confirmed by self-consistent tight binding calculations. Furthermore, we show that an external magnetic field can tune the magnetic superlattice potential created by the nanospheres, and thus the transport characteristics of the system. This technique for magnetic-field-tuned band structure engineering using magnetic nanostructures can be extended to a broader class of 2D van der Waals and topological materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

Chun-Chih Tseng,Tiancheng Song,Qianni Jiang,Zhong Lin,Chong Wang,Jaehyun Suh,Kenji Watanabe,Takashi Taniguchi,Di Xiao,Jiun-Haw Chu,Xiaodong Xu,Matthew Yankowitz,Michael A McGuire,David H Cobden

DOI: https://doi.org/10.1021/acs.nanolett.2c02931

IF: 10.8

2022-10-25

Nano Letters

Abstract:The extreme versatility of van der Waals materials originates from their ability to exhibit new electronic properties when assembled in close proximity to dissimilar crystals. For example, although graphene is inherently nonmagnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway toward achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins

Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat

DOI: https://doi.org/10.1103/PhysRevB.93.045403

2016-01-15

Abstract:Inducing magnetism in graphene holds great promises, such as controlling the exchange interaction with a gate electrode and generating exotic magnetic phases. Coating graphene with magnetic molecules or atoms has so far mostly lead to decreased graphene mobility. In the present work, we show that Pt-porphyrins adsorbed on graphene lead to an enhanced mobility and to gate-dependent magnetism. We report that porphyrins can be donor or acceptor, depending on graphene s initial doping. The porphyrins transfer charge and ionize around the charged impurities on graphene, decreasing the graphene doping and increasing its mobility. In addition, ionized porphyrins carry a magnetic moment. Using the sensitivity of mesoscopic transport to magnetism, in particular the superconducting proximity effect and conductance fluctuations, we explore the magnetic order induced in graphene by the interacting magnetic moments of the ionized porphyrins. Among the signatures of magnetism, we find two-terminal-magnetoresistance fluctuations with an odd component, a tell-tale sign of time reversal symmetry breaking at zero field, that does not exist in uncoated graphene sample. When graphene is connected to superconducting electrodes, the induced magnetism leads to a gate-voltage-dependent suppression of the supercurrent, modified magnetic interference patterns, and gate-voltage-dependent magnetic hysteresis. The magnetic signatures are greatest for long superconductor graphene superconductor junctions and for samples with the highest initial doping, compatible with a greater number of ionized and thus magnetic porphyrins. Our findings suggest that long-range magnetism is induced through graphene by the ionized porphyrins magnetic moment. This magnetic interaction is controlled by the density of carriers in graphene, a tunability that could be exploited in spintronic applications.

Mesoscale and Nanoscale Physics,Materials Science
Defect-induced magnetism and Yu-Shiba-Rusinov states in twisted bilayer graphene

Alejandro Lopez-Bezanilla,Jose L. Lado

DOI: https://doi.org/10.1103/PhysRevMaterials.3.084003

2019-06-07

Abstract:Atomic defects have a significant impact in the low-energy properties of graphene systems. By means of first-principles calculations and tight-binding models we provide evidence that chemical impurities modify both the normal and the superconducting states of twisted bilayer graphene. A single hydrogen atom attached to the bilayer surface yields a triple-point crossing, whereas self-doping and three-fold symmetry-breaking are created by a vacant site. Both types of defects lead to time-reversal symmetry-breaking and the creation of local magnetic moments. Hydrogen-induced magnetism is found to exist also at the doping levels where superconductivity appears in magic angle graphene superlattices. As a result, the coexistence of superconducting order and defect-induced magnetism yields in-gap Yu-Shiba-Rusinov excitations in magic angle twisted bilayer graphene.

Materials Science,Mesoscale and Nanoscale Physics
Defect-Induced Discriminative Modulation of the Highest Occupied Molecular Orbital Energies of Graphene

Wenjuan Yuan,Hongping Yang,Jun Luo,Jing Zhu

DOI: https://doi.org/10.1063/1.4935405

IF: 1.697

2015-01-01

AIP Advances

Abstract:Defects are capable of modulating various properties of graphene, and thus controlling defects is useful in the development of graphene-based devices. Here we present first-principles calculations, which reveal a new avenue for defect engineering of graphene: the modulation by defects on the highest occupied molecular orbital (HOMO) energy of a charged monolayer graphene quantum dot (GQD) is discriminative. When the charge of a GQD increases its HOMO energy also increases. Importantly, when the GQD contains one particular class of defects its HOMO energy is sometimes higher and sometimes lower than that of the corresponding GQD without any defects, but when the GQD contains another class of defects its HOMO energy is always higher or lower than that of the corresponding intact GQD as its excess charge reaches a critical value. This discriminative modulation could allow defect engineering to control secondary electron ejection in graphene, leading to a new way to develop graphene-based devices.
Orbital selective and tunable Kondo effect of magnetic adatoms on graphene: Correlated electronic structure calculations

D. Jacob,G. Kotliar

DOI: https://doi.org/10.1103/PhysRevB.82.085423

2010-06-29

Abstract:We have studied the effect of dynamical correlations on the electronic structure of single Co adatoms on graphene monolayers with a recently developed novel method for nanoscopic materials that combines density functional calculations with a fully dynamical treatment of the strongly interacting 3d-electrons. The coupling of the Co 3d-shell to the graphene substrate and hence the dynamic correlations are strongly dependent on the orbital symmetry and the system parameters (temperature, distance of the adatom from the graphene sheet, gate voltage). When the Kondo effect takes place, we find that the dynamical correlations give rise to strongly temperature-dependent peaks in the Co 3d-spectra near the Fermi level. Moreover, we find that the Kondo effect can be tuned by the application of a gate voltage. It turns out that the position of the Kondo peaks is pinned to the Dirac points of graphene rather than to the chemical potential.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Ping Wang,Fuzhuo Lian,Renjun Du,Xiaofan Cai,Song Bao,Yaqing Han,Jingkuan Xiao,Kenji Watanabe,Takashi Taniguchi,Jinsheng Wen,Hongxin Yang,Alexander S. Mayorov,Lei Wang,Geliang Yu

DOI: https://doi.org/10.1063/5.0178916

2024-04-28

Abstract:We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of $\rm CrI_3$ and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation doping. The lowest conduction band depends on the magnetic states of the $\rm CrI_3$ and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene.

Mesoscale and Nanoscale Physics
Self-Doping And Magnetic Ordering Induced By Extended Line Defects In Graphene

Ji-Chang Ren,Zejun Ding,Rui-Qin Zhang,Michel A. Van Hove

DOI: https://doi.org/10.1103/PhysRevB.91.045425

IF: 3.7

2015-01-01

Physical Review B

Abstract:Based on first-principles calculations, we reveal that the interactions between extended line defects (ELDs) of type "585" (formed by five and eight membered rings) ELDs embedded in graphene can induce ordered magnetism and self-doping of graphene. By reducing the distance between 585 ELDs, a distinct charge transfer is predicted from the center of 585 ELDs to their edges, which induces a Dirac point shift below the Fermi level, resulting in distance-or density-dependent n-type doping in the graphene. Relevant to the above finding, we found a distance-dependent spin polarization at the edges of 585 ELDs, attributable to the rigidity of the pi electronic structure. Our finding suggests a promising approach for achieving n-type graphene for spintronic devices by creating 585 ELDs.

Tunable Kondo effect in graphene with defects

Gate Tunable Kondo Effect in Magnetic Molecule Decorated Graphene

Ferromagnetism-induced Kondo Effect in Graphene with a Magnetic Impurity

Gate-tunable Kondo resistivity and dephasing rate in graphene studied by numerical renormalization group calculations

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

Scanning Tunneling Spectroscopy of a Magnetic Atom on Graphene in the Kondo Regime

Control of the local magnetic states in graphene with voltage and gating

Strain Controlled Ferromagnetic–ferrimagnetic Transition and Vacancy Formation Energy of Defective Graphene

Tuning Magnetic Properties of Graphene Nanoribbons with Topological Line Defects: from Antiferromagnetic to Ferromagnetic

Vacancy-Induced Tunable Kondo Effect in Twisted Bilayer Graphene

Tunable Magnetism of Transition Metal Nanostructures by Hydrogenated Graphene

Topological Phases, Local Magnetic Moments, and Spin Polarization Triggered by C558-Line Defects in Graphene

Tunable magnetic confinement effect in a magnetic superlattice of graphene

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins

Defect-induced magnetism and Yu-Shiba-Rusinov states in twisted bilayer graphene

Defect-Induced Discriminative Modulation of the Highest Occupied Molecular Orbital Energies of Graphene

Orbital selective and tunable Kondo effect of magnetic adatoms on graphene: Correlated electronic structure calculations

Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Self-Doping And Magnetic Ordering Induced By Extended Line Defects In Graphene